Open Access. Powered by Scholars. Published by Universities.®
Articles 1 - 1 of 1
Full-Text Articles in Engineering
On The Thermal Activation Of Negative Bias Temperature Instability, Richard G. Southwick Iii, William B. Knowlton, Ben Kaczer, Tibor Grasser
On The Thermal Activation Of Negative Bias Temperature Instability, Richard G. Southwick Iii, William B. Knowlton, Ben Kaczer, Tibor Grasser
Materials Science and Engineering Faculty Publications and Presentations
The temperature dependence of negative bias temperature instability (NBTI) is investigated on 2.0nm SiO2 devices from temperatures ranging from 300K down to 6K with a measurement window of ~12ms to 100s. Results indicate that classic NBTI degradation is observed down to ~200K and rarely observed at temperatures below 140K in the experimental window. Since experimental results show the charge trapping component contributing to NBTI is thermally activated, the results cannot be explained with the conventionally employed elastic tunneling theory. A new mechanism is observed at temperatures below 200K where device performance during stress conditions improves rather than degrades with …