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Electrical And Optical Characterization Of Intrinsic And Ion-Implantation Induced Defects In 6h- And 4h-Sic, Michael B. Scott
Electrical And Optical Characterization Of Intrinsic And Ion-Implantation Induced Defects In 6h- And 4h-Sic, Michael B. Scott
Theses and Dissertations
Deep level transient spectroscopy (DLTS), Hall effect, and cathodolummescence (CL) measurements are used to characterize the intrinsic and ion-implantation induced defects in high-temperature (475 and 500 °C) ion-implanted epitaxial n-type 6H- and 4H-SiC, ion-implanted with Cr, Mg, Ar, N, and P atoms. Comparison of room-temperature and high-temperature ion-implanted 6H-SiC:Mg and :Cr indicate the significance of high-temperature ion implantation on the activation of the ion-implanted atoms and damage-recovery of the crystalline lattice. The effects of high-temperature annealing on both damage-recovery and implanted ion activation are detected and analyzed, from 1200 to 1800 °C. Trap parameters of both damage-related and species-related defects …