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Full-Text Articles in Engineering
Effects Of Foreign Object Damage From Small Hard Particles On The High-Cycle Fatigue Life Of Ti-6a1-4v, Joseph L. Hamrick Ii
Effects Of Foreign Object Damage From Small Hard Particles On The High-Cycle Fatigue Life Of Ti-6a1-4v, Joseph L. Hamrick Ii
Theses and Dissertations
Thin rectangular samples of Ti-6Al-4V were damaged by four methods to represent foreign object damage found in turbine engine blades: 1) impact with 2 mm and 5 mm diameter glass spheres at 305 m/s, 2) impact with 2 mm and 4 mm diameter steel spheres at 305 m/s, 3) quasi-static displacement controlled indentation using steel chisels with 1 mm, 2 mm and 5 mm diameter tips and 4) shearing notches with a 2 mm diameter chisel point under a quasi-static loading condition. Finite element analysis was used to study the relationship between the stress state created by the plastic damage …
Electrical And Optical Characterization Of Intrinsic And Ion-Implantation Induced Defects In 6h- And 4h-Sic, Michael B. Scott
Electrical And Optical Characterization Of Intrinsic And Ion-Implantation Induced Defects In 6h- And 4h-Sic, Michael B. Scott
Theses and Dissertations
Deep level transient spectroscopy (DLTS), Hall effect, and cathodolummescence (CL) measurements are used to characterize the intrinsic and ion-implantation induced defects in high-temperature (475 and 500 °C) ion-implanted epitaxial n-type 6H- and 4H-SiC, ion-implanted with Cr, Mg, Ar, N, and P atoms. Comparison of room-temperature and high-temperature ion-implanted 6H-SiC:Mg and :Cr indicate the significance of high-temperature ion implantation on the activation of the ion-implanted atoms and damage-recovery of the crystalline lattice. The effects of high-temperature annealing on both damage-recovery and implanted ion activation are detected and analyzed, from 1200 to 1800 °C. Trap parameters of both damage-related and species-related defects …
Electrical Characterization Of Ion-Implanted 4h-Silicon Carbide, Christian P. Morath
Electrical Characterization Of Ion-Implanted 4h-Silicon Carbide, Christian P. Morath
Theses and Dissertations
Electrical characterization has been performed on ion-implanted p-type 4H-SiC to assess the activation efficiency and implantation-related damage recrystallization with the intention of developing an implantation/annealing scheme. Low doped (Na - Nd = 5x10(exp 15)/cu cm) epitaxial p-type layers grown by MOCVD were implanted with Al or B at doses ranging from 1x10(exp 13) to 1x10(exp 14)/sq cm at room temperature or 500 deg. C. The electrical technique of Temperature Dependent Hall Effect (TDHE) indicated that Al and B act as shallow acceptors 4H-SiC with ionization energies of ^252 and ^285 meV, respectively. The highest activation efficiency for Al and B …