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Materials Science and Engineering

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University at Albany, State University of New York

2012

Graphene p-n junction

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Full-Text Articles in Engineering

Surface Potential Measurements Of Reconfigurable P-N Junctions In Graphene, Yunfei Wang Jan 2012

Surface Potential Measurements Of Reconfigurable P-N Junctions In Graphene, Yunfei Wang

Legacy Theses & Dissertations (2009 - 2024)

Manipulation and control of electron current in a graphene p-n junction (e.g. electron waveguiding, reflection, focusing) is directly determined by the spatial gradient of the Fermi level across the junction. Sharp Fermi level gradients are associated with negative index `lensing' of electrons in graphene while broader gradients are predicted to form reflective boundaries. Quantitative metrology of the Fermi level gradient at p-n junctions is thus essential to determine device performance, validate models for device design and switch architectures, and quantitatively determine the impact of defects on device function and leakage.