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Articles 1 - 7 of 7
Full-Text Articles in Engineering
A Novel Fabrication Technique For Three-Dimensional Nanostructures, Ravi Kiran Bonam
A Novel Fabrication Technique For Three-Dimensional Nanostructures, Ravi Kiran Bonam
Legacy Theses & Dissertations (2009 - 2024)
Three dimensional micro- and nano-structures are commonly used in the field of Photonics, Optoelectronics, Sensors and Biological applications. Although numerous physical models are developed, a major challenge has been in their fabrication which is commonly limited to conventional layer-by-layer techniques. In this dissertation, a novel method for fabricating three dimensional structures using Electron Beam Lithography (EBL) will be presented.
Materials Engineering For Near-Infrared Light Emission From Silicon Compatible Mos Structures, Himani Suhag Kamineni
Materials Engineering For Near-Infrared Light Emission From Silicon Compatible Mos Structures, Himani Suhag Kamineni
Legacy Theses & Dissertations (2009 - 2024)
Silicon-based photonics requires several components, such as a light source, an amplifier/waveguide to transfer the signal, and a photodetector to detect the signal. The motivation for using these silicon-based technologies in photonics applications is two-fold: economic advantages offered by the compatibility with mature silicon IC manufacturing and its excellent material properties for photonic devices (high thermal conductivity, high optical damage threshold, etc.). One of the major challenges in the realization of this technology is the Si-based light source. Because of its indirect bandgap, silicon has very inefficient band-to-band radiative electron-hole recombination. To overcome this obstacle, tremendous research efforts have been …
Plasma Enhanced Atomic Layer Deposition Of Cu Seed Layers At Low Process Temperatures, Jiajun Mao
Plasma Enhanced Atomic Layer Deposition Of Cu Seed Layers At Low Process Temperatures, Jiajun Mao
Legacy Theses & Dissertations (2009 - 2024)
In conventional Cu interconnect fabrication, a sputtered copper seed layer is deposited before the electrochemically deposited (ECD) copper plating step. However, as interconnect dimensions scale down, non-conformal seed layer growth and subsequent voiding of metallized structures is becoming a critical issue. With its established excellent thickness controllability and film conformality, atomic layer deposition (ALD) is becoming an attractive deposition approach for the sub-24nm fabrication regime. However, in order to achieve a smooth and continuous seed layer deposition, a low process temperature (below 100oC) is needed, given the tendency of Cu agglomeration at elevated temperature. In this research, plasma enhanced ALD …
Development Of Iii-V P-Mosfets With High-Kappa Gate Stack For Future Cmos Applications, Padmaja Nagaiah
Development Of Iii-V P-Mosfets With High-Kappa Gate Stack For Future Cmos Applications, Padmaja Nagaiah
Legacy Theses & Dissertations (2009 - 2024)
As the semiconductor industry approaches the limits of traditional silicon CMOS scaling, non-silicon materials and new device architectures are gradually being introduced to improve Si integrated circuit performance and continue transistor scaling. Recently, the replacement of SiO2 with a high-k material (HfO2) as gate dielectric has essentially removed one of the biggest advantages of Si as channel material. As a result, alternate high mobility materials are being considered to replace Si in the channel to achieve higher drive currents and switching speeds. III-V materials in particular have become of great interest as channel materials, owing to their superior electron transport …
Modified Statistical Dynamical Diffraction Theory : A Novel Metrological Analysis Method For Partially Relaxed And Defective C Doped Si And Sige Heterostructures, Paul Kenneth Shreeman
Modified Statistical Dynamical Diffraction Theory : A Novel Metrological Analysis Method For Partially Relaxed And Defective C Doped Si And Sige Heterostructures, Paul Kenneth Shreeman
Legacy Theses & Dissertations (2009 - 2024)
The statistical dynamical diffraction theory, which has been initially developed by late Kato remained in obscurity for many years due to intense and difficult mathematical treatment that proved to be quite challenging to implement and apply. With assistance of many authors in past (including Bushuev, Pavlov, Pungeov, and among the others), it became possible to implement this unique x-ray diffraction theory that combines the kinematical (ideally imperfect) and dynamical (the characteristically perfect diffraction) into a single system of equations controlled by two factors determined by long range order and correlation function within the structure. The first stage is completed by …
Experimental And Theoretical Analysis Of Strain Engineered Aluminium Nitride On Silicon For High Quality Aluminium(X)Indium(Y)Gallium(1-X-Y)Nitride Epitaxy, Mihir Hemant Tungare
Experimental And Theoretical Analysis Of Strain Engineered Aluminium Nitride On Silicon For High Quality Aluminium(X)Indium(Y)Gallium(1-X-Y)Nitride Epitaxy, Mihir Hemant Tungare
Legacy Theses & Dissertations (2009 - 2024)
III-Nitrides on Si are of great technological importance due to the availability of large area, epi ready Si substrates and the ability to heterointegrate with mature silicon micro and nanoelectronics. The major roadblock with realizing this is the large difference in thermal expansion coefficients and lattice constants between the two material systems. A novel technique developed in our research lab shows the potential of simultaneous and substantial reduction in dislocation and crack density in GaN on Si (111). Research undertaken in the current doctoral dissertation, validates the superior GaN quality on Si obtained using our technique and determines the factors …
Surface Potential Measurements Of Reconfigurable P-N Junctions In Graphene, Yunfei Wang
Surface Potential Measurements Of Reconfigurable P-N Junctions In Graphene, Yunfei Wang
Legacy Theses & Dissertations (2009 - 2024)
Manipulation and control of electron current in a graphene p-n junction (e.g. electron waveguiding, reflection, focusing) is directly determined by the spatial gradient of the Fermi level across the junction. Sharp Fermi level gradients are associated with negative index `lensing' of electrons in graphene while broader gradients are predicted to form reflective boundaries. Quantitative metrology of the Fermi level gradient at p-n junctions is thus essential to determine device performance, validate models for device design and switch architectures, and quantitatively determine the impact of defects on device function and leakage.