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Articles 1 - 6 of 6
Full-Text Articles in Engineering
Carrier Transport Engineering In Wide Bandgap Semiconductors For Photonic And Memory Device Applications, Ravi Teja Velpula
Carrier Transport Engineering In Wide Bandgap Semiconductors For Photonic And Memory Device Applications, Ravi Teja Velpula
Dissertations
Wide bandgap (WBG) semiconductors play a crucial role in the current solid-state lighting technology. The AlGaN compound semiconductor is widely used for ultraviolet (UV) light-emitting diodes (LEDs), however, the efficiency of these LEDs is largely in a single-digit percentage range due to several factors. Until recently, AlInN alloy has been relatively unexplored, though it holds potential for light-emitters operating in the visible and UV regions. In this dissertation, the first axial AlInN core-shell nanowire UV LEDs operating in the UV-A and UV-B regions with an internal quantum efficiency (IQE) of 52% are demonstrated. Moreover, the light extraction efficiency of this …
Iii-Nitride Nanostructures: Photonics And Memory Device Applications, Barsha Jain
Iii-Nitride Nanostructures: Photonics And Memory Device Applications, Barsha Jain
Dissertations
III-nitride materials are extensively studied for various applications. Particularly, III-nitride-based light-emitting diodes (LEDs) have become the major component of the current solid-state lighting (SSL) technology. Current III-nitride-based phosphor-free white color LEDs (White LEDs) require an electron blocking layer (EBL) between the device active region and p-GaN to control the electron overflow from the active region, which has been identified as one of the primary reasons to adversely affect the hole injection process. In this dissertation, the effect of electronically coupled quantum well (QW) is investigated to reduce electron overflow in the InGaN/GaN dot-in-a-wire phosphor-free white LEDs and to improve the …
Development And Characterization Of Nano Nickel-Based Conductive Inks For Flexographic Printing Of Electronics And New Interpretations Of Surface Energies Of Solids, Bilge Nazli Altay
Development And Characterization Of Nano Nickel-Based Conductive Inks For Flexographic Printing Of Electronics And New Interpretations Of Surface Energies Of Solids, Bilge Nazli Altay
Dissertations
Traditional printing technologies and conductive/functional inks have been integrated to print electronic devices and circuits on really think, lightweight and flexible materials in a time and cost-effective manner. Printing is an additive manufacturing technology, which selectively deposits materials only where needed to produce a wide range of devices including sensors, smart packaging, solar panels, batteries, light sources and wearable electronics. Therefore, it greatly reduces the number of required steps for manufacturing as well as the amount of waste generated relative to conventional electronic manufacturing. However, the process requirements and ink formulations to print electronics differ from graphic printing; therefore, the …
Study Of N Incorporation In Insb On Gaas By Molecular Beam Epitaxy For Long Wavelength Infrared Devices, Nimai Chand Patra
Study Of N Incorporation In Insb On Gaas By Molecular Beam Epitaxy For Long Wavelength Infrared Devices, Nimai Chand Patra
Dissertations
The distinguishing features of dilute nitride III-V semiconductors lie in the large simultaneous reduction in the band gap and lattice parameter when N is incorporated in small amounts in an otherwise wide band gap III-V material. In particular, N incorporation in InSb is attracting great attention due to its potential applications in the long wavelength infrared (LWIR) applications. However, the relatively small atomic size of N with respect to Sb makes the growth of good quality InSbN layers challenging with effective N incorporation. In this dissertation we present a correlation of the molecular beam epitaxial growth parameters on the type …
The Effects Of Deposition Conditions On Rf Sputtered Gallium Tin Zinc Oxide Thin Film Transistors, Tanina Bradley
The Effects Of Deposition Conditions On Rf Sputtered Gallium Tin Zinc Oxide Thin Film Transistors, Tanina Bradley
Dissertations
Thin film transistors (TFTs) were fabricated with a transparent amorphous gallium tin zinc oxide (GSZO) channel layer. GSZO is a promising, low cost replacement for the commonly used indium gallium zinc oxide (IGZO).The transistors were fabricated on Si substrates to optimize performance prior to transferring device production to flexible substrates. This dissertation will address the effects of deposition and post-deposition parameters on the film properties and interface traps. It will also address the parameters’ resultant effects on device performance and stability with the use of various characterization techniques. Film properties were studied using x-ray diffraction (XRD) and transmission measurements to …
Nano-Scaled Fet Device For Cmos Technology, Prabhat Ranjan Pathak
Nano-Scaled Fet Device For Cmos Technology, Prabhat Ranjan Pathak
Dissertations
In this work the 3-D structure of the Accumulation mode (ACM) and Enhance mode (ECM) FinFET was developed by the Taurus-Device Editor. The design of both ACM and ECM FinFET was optimized for high-performance IC applications to meet ITRS specification for Ioff current, for 9nm gate length. The design of ACM and ECM FinFET is optimized, analyzed and compared against each other with respect to Darin Induced Barrier Lower (DIBL), Sub-threshold Swing(SS), operation and performance characteristics with varying electrical and physical parameters Silicon thickness (Tsi), Source/Drain doping gradient (σsd), electrical channel length (Leff ), …