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Study Of N Incorporation In Insb On Gaas By Molecular Beam Epitaxy For Long Wavelength Infrared Devices, Nimai Chand Patra
Study Of N Incorporation In Insb On Gaas By Molecular Beam Epitaxy For Long Wavelength Infrared Devices, Nimai Chand Patra
Dissertations
The distinguishing features of dilute nitride III-V semiconductors lie in the large simultaneous reduction in the band gap and lattice parameter when N is incorporated in small amounts in an otherwise wide band gap III-V material. In particular, N incorporation in InSb is attracting great attention due to its potential applications in the long wavelength infrared (LWIR) applications. However, the relatively small atomic size of N with respect to Sb makes the growth of good quality InSbN layers challenging with effective N incorporation. In this dissertation we present a correlation of the molecular beam epitaxial growth parameters on the type …
The Effects Of Deposition Conditions On Rf Sputtered Gallium Tin Zinc Oxide Thin Film Transistors, Tanina Bradley
The Effects Of Deposition Conditions On Rf Sputtered Gallium Tin Zinc Oxide Thin Film Transistors, Tanina Bradley
Dissertations
Thin film transistors (TFTs) were fabricated with a transparent amorphous gallium tin zinc oxide (GSZO) channel layer. GSZO is a promising, low cost replacement for the commonly used indium gallium zinc oxide (IGZO).The transistors were fabricated on Si substrates to optimize performance prior to transferring device production to flexible substrates. This dissertation will address the effects of deposition and post-deposition parameters on the film properties and interface traps. It will also address the parameters’ resultant effects on device performance and stability with the use of various characterization techniques. Film properties were studied using x-ray diffraction (XRD) and transmission measurements to …
Nano-Scaled Fet Device For Cmos Technology, Prabhat Ranjan Pathak
Nano-Scaled Fet Device For Cmos Technology, Prabhat Ranjan Pathak
Dissertations
In this work the 3-D structure of the Accumulation mode (ACM) and Enhance mode (ECM) FinFET was developed by the Taurus-Device Editor. The design of both ACM and ECM FinFET was optimized for high-performance IC applications to meet ITRS specification for Ioff current, for 9nm gate length. The design of ACM and ECM FinFET is optimized, analyzed and compared against each other with respect to Darin Induced Barrier Lower (DIBL), Sub-threshold Swing(SS), operation and performance characteristics with varying electrical and physical parameters Silicon thickness (Tsi), Source/Drain doping gradient (σsd), electrical channel length (Leff ), …