Engineering Commons^™

High-Temperature Optoelectronic Device Characterization And Integration Towards Optical Isolation For High-Density Power Modules, Syam Madhusoodhanan

Graduate Theses and Dissertations

Power modules based on wide bandgap (WBG) materials enhance reliability and considerably reduce cooling requirements that lead to a significant reduction in total system cost and weight. Although these innovative properties lead power modules to higher power density, some concerns still need to be addressed to take full advantage of WBG-based modules. For example, the use of bulky transformers as a galvanic isolation system to float the high voltage gate driver limits further size reduction of the high-temperature power modules. Bulky transformers can be replaced by integrating high-temperature optocouplers to scale down power modules further and achieve disrupting performance in …

Exploring Gated Nanoelectronic Devices Fabricated From 1d And 2d Materials, Prathamesh A. Dhakras

Legacy Theses & Dissertations (2009 - 2024)

One and two dimensional materials are being extensively researched toward potential application as ultra-thin body channel materials. The difficulty of implementing physical doping methods in these materials has necessitated various alternative doping schemes, the most promising of which is the electrostatic gating technique due to its reconfigurability. This dissertation explores the different fundamental devices that can be fabricated and characterized by taking advantage of the electrostatic gating of individual single-walled carbon nanotubes (SWNTs), dense SWNT networks and exfoliated 2D tungsten diselenide (WSe2) flakes.

Properties Of Matter, Mike Jackson, Holly Haney

High School Lesson Plans

Students will investigate the relationship(s) between thermal and electrical properties of matter. First, students will use a multimeter and temperature probe to investigate the relationship between electrical resistance and temperature of an electrical resistor composed of metals. They will then graph collected data to analyze the relationship and draw a conclusion as to their relationship. They will then perform the same investigation on a thermal resistor made of a semiconducting substance and analyze that collected data. Finally, using ClaimEvidence-Reasoning (CER) structure, students will use their experimental evidence to state the similarities and differences between the electro-thermal properties of metals and …

Small-Signal-Stability Enhancement Using A Power-System Stabilizer Based On The Cuckoo-Search Algorithm Against Contingency N-1 In The Sulselrabar 150-Kv System, Muhammad Ruswandi Djalal, Muhammad Yusuf Yunus, Herlambang Setiadi, Awan Uji Krismanto

Makara Journal of Technology

Small-signal stability is one of the main factors limiting power transmission in conventional power systems. This concern is primarily handled by adding damper windings of a synchronous generator and power-system stabilizer (PSS). However, due to the impact of the N-1 contingency, damper windings and a conventional PSS are insufficient to overcome this problem. Proper placement and design of the PSS are crucial for improving stability. One approach to optimizing the placement and tuning of the PSS is to use an artificial-intelligence method. Here, the cuckoo-search algorithm (CSA) is proposed to optimize the PSS tuning and placement. Based on simulation, it …

Assessment On Heck-Immine Derivatives As Organic Semiconductor Materials, Rafizah Rahamathullah, Lim Keemi, Wan M. Khairul

Makara Journal of Technology

This paper reports the synthetic, characterization and theoretical evaluation of new class of hybrid Heck-immine system involving mixed moieties of vinylene (C=C) and azomethines (CH=N) which has been successfully integrated into an addition of organic semiconducting materials. The assessment of 4-[(hexyloxyphenyl)methylene]amino)-4’-chloro-stilbene (HEXCS) based on Donor (D)-π-Acceptor (A) was evaluated as active semiconductor material candidates via several spectroscopic and analytical techniques. In turn, the investigation of its potential as dopant system in conductive film was successfully deposited on indium tin oxide (ITO) coated substrate via spin coating method. The relationship between electronic and optical properties, chemical modelling at molecular interactions and …

Study On Semiconductor Properties Of Acetylide-Thiourea Fabricated Onto Interdigitated Electrodes (Ides) Platform Towards Application In Gas Sensing Technology, Adibah Izzati Daud, Wan M. Khairul, M. I. N. Isa, Khairul Anuar Abdul Wahid

Makara Journal of Technology

In the past few decades, the unique properties of acetylide and thiourea moieties individually have attracted great attention from researchers in various fields to be developed in numerous applications in advanced materials technology, especially as an active layer in gas sensing devices. The molecular systems of acetylide and thiourea provide a wide range of electronic properties as they possess rigid π-systems in their designated structures. In this study, a derivative of acetylide-thiourea featuring N-(4[4-aminophenyl] ethynyl benzonitrile)-N’-(4-ethyl benzoyl) thiourea (TCN) has been synthesised with the general formula of ArC(O)NHC(S)NHC≡C)Ar adopted the system of D-π-A for the significant development of conductive materials. …

Atomistic Configuration Interaction Simulation Tool For Semiconductor Based Quantum Computing Devices, Jingbo Wu, Archana Tankasala, Jim Fonseca, Rajib Rahman, Gerhard Klimeck

The Summer Undergraduate Research Fellowship (SURF) Symposium

Solid-state devices are promising candidates for quantum computing applications due to obvious advantages in compatibility with semiconductor fabrication technologies and the extremely long coherent times of electron and nuclear spins in these devices. In such devices, electron interactions are crucial for single and two qubit gate operations. Thus it is essential to evaluate these electron-electron interactions accurately for precise qubit control. It is shown that Atomistic Configuration Interaction can be used to accurately determine electron-electron interactions in realistic semiconductor quantum computing devices. In this work, an online simulation tool on Atomistic Configuration Interaction has been implemented and published on nanoHUB.org, …

Semiconductor Thermal Neutron Detector, Toru Aoki, Aki Miyake, Takayuki Nakano, Akifumi Koike, Hisashi Morii, Hidenori Mimura

Makara Journal of Technology

The CdTe and GaN detector with a Gd converter have been developed and investigated as a neutron detector for neutron imaging. The fabricated Gd/CdTe detector with the 25 mm thick Gd was designed on the basis of simulation results of thermal neutron detection efficiency and spatial resolution. The Gd/CdTe detector shows the detection of neutron capture gamma ray emission in the 155Gd(n, g)156Gd, 157Gd(n, g)158Gd and 113Cd(n, g)114Cd reactions and characteristic X-ray emissions due to conversion-electrons generated inside the Gd film. The observed efficient thermal neutron detection with the Gd/CdTe detector shows its promise in neutron radiography application. Moreover, a …

High Resistivity Amorphous Selenium Alloy Semiconductors For Radiation Detection Applications, Abhinav Mehta

Theses and Dissertations

High resolution noninvasive tools of diagnosis has always derived and enabled scientific and medical research to probe and better understand subtleties of matter, intangible to the human eye. Radiation detection systems are highly dependent on advancements in materials and devices with front-end electronics. There are various discrete applications of these radiation detectors and each application imposes certain requirements so there is no single optimum radiation detector.

Flat panel x-ray imagers have gained high demand in the past decade because of exponential improvement in readout electronics. We have synthesized and investigated stabilized amorphous selenium (a-Se) alloys suitable for high resolution flat …

Quantum Dot Energy Relaxation Mediated By Plasmon Emission In Doped Covalent Semiconductor Heterostructures, A. V. Fedorov, Anna Baranov, I. D. Rukhlenko, T. S. Perova, Kevin Berwick

Articles

The interaction between interface plasmons within a doped substrate and quantum dot electrons or holes has been theoretically studied in double heterostructures based on covalent semiconductors. The interface plasmon modes, the corresponding dispersion relationship, and the intraband carrier relaxation rate in quantum dots are reported. We find the critical points in the interface plasmon density of states for multilayered structures results in enhanced quantum dot intraband carrier relaxation when compared to that for a single heterostructure. A detailed discussion is made of the relaxation rate and the spectral position dependencies on the quantum dot layer thickness as well as on …