Engineering Commons^™

Electronic And Magnetic Properties Of Two-Dimensional Nanomaterials Beyond Graphene And Their Gas Sensing Applications: Silicene, Germanene, And Boron Carbide, Sadegh Mehdi Aghaei

FIU Electronic Theses and Dissertations

The popularity of graphene owing to its unique properties has triggered huge interest in other two-dimensional (2D) nanomaterials. Among them, silicene shows considerable promise for electronic devices due to the expected compatibility with silicon electronics. However, the high-end potential application of silicene in electronic devices is limited owing to the lack of an energy band gap. Hence, the principal objective of this research is to tune the electronic and magnetic properties of silicene related nanomaterials through first-principles models.

I first explored the impact of edge functionalization and doping on the stabilities, electronic, and magnetic properties of silicene nanoribbons (SiNRs) and …

Digitally Manufactured Spatially Variant Photonic Crystals, Javier Jair Pazos

Open Access Theses & Dissertations

Metamaterials and photonic crystals are engineered composites that exhibit electromagnetic properties superior to those found in nature. They have been shown to produce novel and useful phenomena that allow extraordinary control over the electromagnetic field. One of these phenomena is self-collimation, an effect observed in photonic crystals in which a beam of light propagates without diffraction and is forced to flow in the direction of the crystal. Self-collimation however, like many of the mechanisms enabled through dispersion engineering, is effective in directions only along the principal axes of the lattice. To this effect, a general purpose synThesis procedure was developed …

Structural, Optical And Electrical Properties Of Yttrium-Doped Hafnium Oxide Nanocrystalline Thin Films, Abhilash Kongu

Open Access Theses & Dissertations

Hafnium oxide (HfO2) has emerged as the most promising high-k dielectric for Metal-Oxide-Semiconductor (MOS) devices and has been highlighted as the most suitable dielectric materials to replace silicon oxide because of its comprehensive performance. In the present research, yttrium-doped HfO2 (YDH) thin films were fabricated using RF magnetron sputter deposition onto Si (100) and quartz with a variable thickness. Cross-sectional scanning electron microscopy coupled with Filmetrics revealed that film thickness values range from 700 A° to 7500 A°. Electrical properties such as AC Resistivity and current-voltage (I-V) characteristics of YDH films were studied. YDH films that were relatively thin (<1500 A°) crystallized in monoclinic phase while thicker films crystallized in cubic phase. The band gap (Eg) of the films was calculated from the optical measurements. The band gap was found to be ∼5.60 eV for monoclinic while it is ∼6.05 eV for cubic phase of YDH films. Frequency dependence of the electrical resistivity (ρac) and the total conductivity of the films were measured. Resistivity decreased (by three orders of magnitude) with increasing frequency from 100 Hz to 1 MHz, attributed due to the hopping mechanism in YDH films. Whereas, while ρac∼1Ω-m at low frequencies (100 Hz), it decreased to ∼ 104 Ω-cm at higher frequencies (1 MHz). Aluminum (Al) metal electrodes were deposited to fabricate a thin film capacitor with YDH layer as dielectric film thereby employing Al-YDH-Si capacitor structure. The results indicate that the capacitance of the films decrease with increasing film thickness. A detailed analysis of the electrical characteristics of YDH films is presented.