Engineering Commons^™

Reliability Studies Of Tin/Hf-Silicate Based Gate Stacks, Naser Ahmed Chowdhury

Dissertations

Hafnium-silicate based oxides are among the leading candidates to be included into the first generation of high-Κ gate stacks in nano-scale CMOS technology because of their distinct advantages as far as thermal stability, leakage characteristics, threshold stability and low mobility degradation are concerned. Their reliability, which is limited by trapping at pre-existing and stress induced defects, remains to be a major concern.

Energy levels of electrically active ionic defects within the thick high-Κ have been experimentally observed in the context of MOS band diagram for the first time in Hf-silicate gate stacks from low temperature and leakage measurements. Excellent match …

Hot Carrier Effect On Ldmos Transistors, Liangjun Jiang

Electronic Theses and Dissertations

One of the main problems encountered when scaling down is the hot carrier induced degradation of MOSFETs. This problem has been studied intensively during the past decade, under both static and dynamic stress conditions. In this period it has evolved from a more or less academic research topic to one of the most stringent constraints guaranteeing the lifetime of sub-micron devices. New drain engineering technique leads to the extensive usage of lateral doped drain structures. In these devices the peak of the lateral field is lowered by reducing the doping concentration near the drain and by providing a smooth junction …