Engineering Commons^™

Tunable Compact Thz Devices Based On Graphene And Other 2d Material Metasurfaces, Tianjing Guo

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

Since the isolation of graphene in 2004, a large amount of research has been directed at 2D materials and their applications due to their unique characteristics. Compared with the noble metal plasmons in the visible and near-infrared frequencies, graphene can support surface plasmons in the lower frequencies of terahertz (THz) and midinfrared. Especially, the surface conductivity of graphene can be tuned by either chemical doping or electrostatic gating. As a result, the idea of designing graphene metasurfaces is attractive because of its ultra-broadband response and tunability.

It has been demonstrated theoretically and experimentally that the third-order nonlinearity of graphene at …

Gamma-Ray Radiation Effects In Graphene-Based Transistors With H-Bn Nanometer Film Substrates, E. J. Cazalas, Michael R. Hogsed, S. R. Vangala, Michael R. Snure, John W. Mcclory

Faculty Publications

Radiation effects on graphene field effect transistors (GFETs) with hexagonal boron nitride (h-BN) thin film substrates are investigated using 60Co gamma-ray radiation. This study examines the radiation response using many samples with varying h-BN film thicknesses (1.6 and 20 nm thickness) and graphene channel lengths (5 and 10 μm). These samples were exposed to a total ionizing dose of approximately 1 Mrad(Si). I-V measurements were taken at fixed time intervals between irradiations and postirradiation. Dirac point voltage and current are extracted from the I-V measurements, as well as mobility, Dirac voltage hysteresis, and the total number of GFETs that remain …

Electronic And Magnetic Properties Of Two-Dimensional Nanomaterials Beyond Graphene And Their Gas Sensing Applications: Silicene, Germanene, And Boron Carbide, Sadegh Mehdi Aghaei

FIU Electronic Theses and Dissertations

The popularity of graphene owing to its unique properties has triggered huge interest in other two-dimensional (2D) nanomaterials. Among them, silicene shows considerable promise for electronic devices due to the expected compatibility with silicon electronics. However, the high-end potential application of silicene in electronic devices is limited owing to the lack of an energy band gap. Hence, the principal objective of this research is to tune the electronic and magnetic properties of silicene related nanomaterials through first-principles models.

I first explored the impact of edge functionalization and doping on the stabilities, electronic, and magnetic properties of silicene nanoribbons (SiNRs) and …

Sonochemical Synthesis Of Zinc Oxide Nanostructures For Sensing And Energy Harvesting, Phani Kiran Vabbina

FIU Electronic Theses and Dissertations

Semiconductor nanostructures have attracted considerable research interest due to their unique physical and chemical properties at nanoscale which open new frontiers for applications in electronics and sensing. Zinc oxide nanostructures with a wide range of applications, especially in optoelectronic devices and bio sensing, have been the focus of research over the past few decades. However ZnO nanostructures have failed to penetrate the market as they were expected to, a few years ago. The two main reasons widely recognized as bottleneck for ZnO nanostructures are (1) Synthesis technique which is fast, economical, and environmentally benign which would allow the growth on …

Advanced Graphene Microelectronic Devices, Chowdhury G. Al-Amin

FIU Electronic Theses and Dissertations

The outstanding electrical and material properties of Graphene have made it a promising material for several fields of analog applications, though its zero bandgap precludes its application in digital and logic devices. With its remarkably high electron mobility at room temperature, Graphene also has strong potential for terahertz (THz) plasmonic devices. However there still are challenges to be solved to realize Graphene’s full potential for practical applications.

In this dissertation, we investigate solutions for some of these challenges. First, to reduce the access resistances which significantly reduces the radio frequency (RF) performance of Graphene field effect transistors (GFETs), a novel …

Nanoscale Contacts Between Semiconducting Nanowires And Metallic Graphenes, Seongmin Kim, David B. Janes, Sung-Yool Choi, Sanghyun Ju

Birck and NCN Publications

Metal–semiconductor (M–S) junctions are important components in many semiconductor devices, and there is growing interest in realizing high quality M–S contacts that are optically transparent. In this paper, we present our investigations into the characteristics of M–S junction in a semiconducting ZnO nanowire that was directly grown on a multilayer graphene film (MGF). The synthesized nanowires were fabricated into two-terminal devices with MGF as one contact and Al as the other contact. By comparison with devices employing Al contacts at both ends, the nanowire resistivity and specific contact resistivity of the MGF–nanowire contact can be extracted. The extracted specific contact …