Open Access. Powered by Scholars. Published by Universities.®

Engineering Commons

Open Access. Powered by Scholars. Published by Universities.®

Articles 1 - 2 of 2

Full-Text Articles in Engineering

Design And Validation Of A Low Cost High Speed Atomic Force Microscope, Michael Ganzer, Tien Pham Sep 2017

Design And Validation Of A Low Cost High Speed Atomic Force Microscope, Michael Ganzer, Tien Pham

Journal of Undergraduate Research at Minnesota State University, Mankato

The Atomic Force Microscope (AFM) is an important instrument in nanoscale topography, but it is expensive and slow. The authors designed an AFM to overcome both limitations. To do this, they used an Optical Pickup Unit (OPU) from a DVD player as the laser and photodetector system to minimize cost and they did not implement a vertical control loop, which maximized potential speed. Students will be able to be use this device to make nanoscale measurements and engage in micro-engineering. To prototype this idea, the authors tested an OPU with a silicon wafer and demonstrated the ability to consistently distinguish …


Optimization Of Reactive Ion Etching (Rie) Parameters For Selective Removal Of Mosfet Gate Dielectric And Evaluation Of Its Physical And Electrical Properties, Hojoon Lee, Samuel Wood Aug 2014

Optimization Of Reactive Ion Etching (Rie) Parameters For Selective Removal Of Mosfet Gate Dielectric And Evaluation Of Its Physical And Electrical Properties, Hojoon Lee, Samuel Wood

Journal of Undergraduate Research at Minnesota State University, Mankato

The integrated circuit (IC) is dominated by technology using Complementary Metal-oxide-Semiconductor Field-effect Transistor (CMOSFET). In order to put over 300 million transistors on silicon chip requires selective removal of material by Reactive Ion Etching (RIE) which ensures vertical cut thereby increasing packing density of devices on the chip. The gate insulator of CMOS devices plays a crucial role in its electrical performance. In this research gate insulator of MOSFET has been etched by state-of-art technique RIE and its physical and electrical properties have been measured. The gate insulator etching by RIE give rise to charge accumulation on the gate dielectric …