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Full-Text Articles in Engineering
Predictive Modeling For Assessing The Reliability Of Bypass Diodes In Photovoltaic Modules, Narendra Shiradkar
Predictive Modeling For Assessing The Reliability Of Bypass Diodes In Photovoltaic Modules, Narendra Shiradkar
Electronic Theses and Dissertations
Solar Photovoltaics (PV) is one of the most promising renewable energy technologies for mitigating the effect of climate change. Reliability of PV modules directly impacts the Levelized Cost of Energy (LCOE), which is a metric for cost competitiveness of any energy technology. Further reduction in LCOE of PV through assured long term reliability is necessary in order to facilitate widespread use of solar energy without the need for subsidies. This dissertation is focused on frameworks for assessing reliability of bypass diodes in PV modules. Bypass diodes are critical components in PV modules that provide protection against shading. Failure of bypass …
Rf Power Amplifier And Oscillator Design For Reliability And Variability, Shuyu Chen
Rf Power Amplifier And Oscillator Design For Reliability And Variability, Shuyu Chen
Electronic Theses and Dissertations
CMOS RF circuit design has been an ever-lasting research field. It gained so much attention since RF circuits have high mobility and wide band efficiency, while CMOS technology has the advantage of low cost and better capability of integration. At the same time, IC circuits never stopped scaling down for the recent many decades. Reliability issues with RF circuits have become more and more severe with device scaling down: reliability effects such as gate oxide break down, hot carrier injection, negative bias temperature instability, have been amplified as the device size shrinks. Process variability issues also become more predominant as …
Design And Characterization Of High Temperature Packaging For Wide-Bandgap Semiconductor Devices, Brian Grummel
Design And Characterization Of High Temperature Packaging For Wide-Bandgap Semiconductor Devices, Brian Grummel
Electronic Theses and Dissertations
Advances in wide-bandgap semiconductor devices have increased the allowable operating temperature of power electronic systems. High-temperature devices can benefit applications such as renewable energy, electric vehicles, and space-based power electronics that currently require bulky cooling systems for silicon power devices. Cooling systems can typically be reduced in size or removed by adopting wide-bandgap semiconductor devices, such as silicon carbide. However, to do this, semiconductor device packaging with high reliability at high temperatures is necessary. Transient liquid phase (TLP) die-attach has shown in literature to be a promising bonding technique for this packaging need. In this work TLP has been comprehensively …
Hot Carrier Effect On Ldmos Transistors, Liangjun Jiang
Hot Carrier Effect On Ldmos Transistors, Liangjun Jiang
Electronic Theses and Dissertations
One of the main problems encountered when scaling down is the hot carrier induced degradation of MOSFETs. This problem has been studied intensively during the past decade, under both static and dynamic stress conditions. In this period it has evolved from a more or less academic research topic to one of the most stringent constraints guaranteeing the lifetime of sub-micron devices. New drain engineering technique leads to the extensive usage of lateral doped drain structures. In these devices the peak of the lateral field is lowered by reducing the doping concentration near the drain and by providing a smooth junction …
Study Of Nanoscale Cmos Device And Circuit Reliability, Chuanzhao Yu
Study Of Nanoscale Cmos Device And Circuit Reliability, Chuanzhao Yu
Electronic Theses and Dissertations
The development of semiconductor technology has led to the significant scaling of the transistor dimensions -The transistor gate length drops down to tens of nanometers and the gate oxide thickness to 1 nm. In the future several years, the deep submicron devices will dominate the semiconductor industry for the high transistor density and the corresponding performance enhancement. For these devices, the reliability issues are the first concern for the commercialization. The major reliability issues caused by voltage and/or temperature stress are gate oxide breakdown (BD), hot carrier effects (HCs), and negative bias temperature instability (NBTI). They become even more important …
Modeling And Simulation Of Long Term Degradation And Lifetime Of Deep-Submicron Mos Device And Circuit, Zhi Cui
Electronic Theses and Dissertations
Long-term hot-carrier induced degradation of MOS devices has become more severe as the device size continues to scale down to submicron range. In our work, a simple yet effective method has been developed to provide the degradation laws with a better predictability. The method can be easily augmented into any of the existing degradation laws without requiring additional algorithm. With more accurate extrapolation method, we present a direct and accurate approach to modeling empirically the 0.18-ìm MOS reliability, which can predict the MOS lifetime as a function of drain voltage and channel length. With the further study on physical mechanism …
Study Of Oxide Breakdown, Hot Carrier And Nbti Effects On Mos Device And Circuit Reliability, Yi Liu
Study Of Oxide Breakdown, Hot Carrier And Nbti Effects On Mos Device And Circuit Reliability, Yi Liu
Electronic Theses and Dissertations
As CMOS device sizes shrink, the channel electric field becomes higher and the hot carrier (HC) effect becomes more significant. When the oxide is scaled down to less than 3 nm, gate oxide breakdown (BD) often takes place. As a result, oxide trapping and interface generation cause long term performance drift and related reliability problems in devices and circuits. The RF front-end circuits include low noise amplifier (LNA), local oscillator (LO) and mixer. It is desirable for a LNA to achieve high gain with low noise figure, a LO to generate low noise signal with sufficient output power, wide tuning …