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Reconfigurable 4-Frequency Cmos Oscillator Based On Aln Contour-Mode Mems Resonators, Matteo Rinaldi, Chengjie Zuo, Jan Van Der Spiegel, Gianluca Piazza
Reconfigurable 4-Frequency Cmos Oscillator Based On Aln Contour-Mode Mems Resonators, Matteo Rinaldi, Chengjie Zuo, Jan Van Der Spiegel, Gianluca Piazza
Chengjie Zuo
This paper reports on the first demonstration of a reconfigurable Complementary Metal Oxide Semiconductor (CMOS) oscillator based on MicroElectroMechanical System (MEMS) resonators operating at 4 different frequencies (268, 483, 690 and 785 MHz). A bank of multi-frequency switchable AlN Contour-Mode MEMS resonators (CMRs) were connected to a single CMOS oscillator circuit that can be configured to selectively operate in 4 different states with distinct oscillation frequencies. The phase noise (PN) of the reconfigurable oscillator was measured for each of the 4 different frequencies of operation showing values between -94 and -70 dBc/Hz at 1 KHz offset and PN floor values …
1.5-Ghz Cmos Voltage-Controlled Oscillator Based On Thickness-Field-Excited Piezoelectric Aln Contour-Mode Mems Resonators, Chengjie Zuo, Jan Van Der Spiegel, Gianluca Piazza
1.5-Ghz Cmos Voltage-Controlled Oscillator Based On Thickness-Field-Excited Piezoelectric Aln Contour-Mode Mems Resonators, Chengjie Zuo, Jan Van Der Spiegel, Gianluca Piazza
Chengjie Zuo
This paper reports on the first demonstration of a 1.5 GHz CMOS oscillator based on thickness-field-excited (TFE) piezoelectric AlN MEMS contour-mode resonators (CMRs). The measured phase noise is −85 dBc/Hz at 10 kHz offset frequency and −151 dBc/Hz at 1 MHz. This is the highest frequency MEMS oscillator ever reported using a laterally vibrating mechanical resonator. The high frequency operation has been enabled by optimizing the geometrical design and micro-fabrication process of TFE AlN CMRs, so that a low effective motional resistance around 50 Ω is achieved together with a high unloaded quality factor (Qu) approaching 2500 and simultaneously high …
Multifrequency Pierce Oscillators Based On Piezoelectric Aln Contour-Mode Mems Technology, Chengjie Zuo, Nipun Sinha, Jan Van Der Spiegel, Gianluca Piazza
Multifrequency Pierce Oscillators Based On Piezoelectric Aln Contour-Mode Mems Technology, Chengjie Zuo, Nipun Sinha, Jan Van Der Spiegel, Gianluca Piazza
Chengjie Zuo
This paper reports on the first demonstration of multifrequency (176-, 222-, 307-, and 482-MHz) oscillators based on the piezoelectric AlN contour-mode microelectromechanical systems technology. All the oscillators show phase noise values between −88 and −68 dBc/Hz at 1-kHz offset frequency from the carriers and phase noise floor values as low as −160 dBc/Hz at 1-MHz offset. The same Pierce circuit design is employed to sustain oscillations at the four different frequencies; on the other hand, the oscillator core consumes 10 mW. The AlN resonators are currently wire bonded to the integrated circuit realized in the AMIS 0.5-μm 5-V complimentary metal-oxide-semiconductor …
1.05-Ghz Cmos Oscillator Based On Lateral-Field-Excited Piezoelectric Aln Contour-Mode Mems Resonators, Chengjie Zuo, Jan Van Der Spiegel, Gianluca Piazza
1.05-Ghz Cmos Oscillator Based On Lateral-Field-Excited Piezoelectric Aln Contour-Mode Mems Resonators, Chengjie Zuo, Jan Van Der Spiegel, Gianluca Piazza
Chengjie Zuo
This paper reports on the first demonstration of a 1.05-GHz microelectromechanical (MEMS) oscillator based on lateral-field-excited (LFE) piezoelectric AlN contour-mode resonators. The oscillator shows a phase noise level of −81 dBc/Hz at 1-kHz offset frequency and a phase noise floor of −146 dBc/Hz, which satisfies the global system for mobile communications (GSM) requirements for ultra-high frequency (UHF) local oscillators (LO). The circuit was fabricated in the AMI semiconductor (AMIS) 0.5-μm complementary metal-oxide-semiconductor (CMOS) process, with the oscillator core consuming only 3.5 mW DC power. The device overall performance has the best figure-of-merit (FoM) when compared with other gigahertz oscillators that …