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Dual-Mode Resonator And Switchless Reconfigurable Oscillator Based On Piezoelectric Aln Mems Technology, Chengjie Zuo, Jan Van Der Spiegel, Gianluca Piazza
Dual-Mode Resonator And Switchless Reconfigurable Oscillator Based On Piezoelectric Aln Mems Technology, Chengjie Zuo, Jan Van Der Spiegel, Gianluca Piazza
Chengjie Zuo
For the first time, this work demonstrates a switchless dual-frequency (472 MHz and 1.94 GHz) reconfigurable CMOS oscillator using a single piezoelectric AlN microelectromechanical-systems resonator with coexisting S0 and S1 Lamb-wave modes of vibration. High performance (high quality factor Q and electromechanical coupling factor kt2 for a resonator and low phase noise for an oscillator) has been achieved for both the resonator and oscillator in terms of dual-mode operation. In particular, 1.94-GHz operation has the best phase noise performance at 1-MHz offset when compared with all previously reported CMOS oscillators that work at a similar frequency.
Reconfigurable Cmos Oscillator Based On Multifrequency Aln Contour-Mode Mems Resonators, Matteo Rinaldi, Chengjie Zuo, Jan Van Der Spiegel, Gianluca Piazza
Reconfigurable Cmos Oscillator Based On Multifrequency Aln Contour-Mode Mems Resonators, Matteo Rinaldi, Chengjie Zuo, Jan Van Der Spiegel, Gianluca Piazza
Chengjie Zuo
This paper reports on the first demonstration of a reconfigurable complementary-metal-oxide-semiconductor (CMOS) oscillator based on microelectromechanical system (MEMS) resonators operating at four different frequencies (268, 483, 690, and 785 MHz). A bank of multifrequency switchable AlN contour-mode MEMS resonators was connected to a single CMOS oscillator circuit that can be configured to selectively operate in four different states with distinct oscillation frequencies. The phase noise (PN) of the reconfigurable oscillator was measured for each of the four different frequencies of operation, showing values between −94 and −70 dBc/Hz at a 1-kHz offset and PN floor values as low as −165 …
Switch-Less Dual-Frequency Reconfigurable Cmos Oscillator Using One Single Piezoelectric Aln Mems Resonator With Co-Existing S0 And S1 Lamb-Wave Modes, Chengjie Zuo, Jan Van Der Spiegel, Gianluca Piazza
Switch-Less Dual-Frequency Reconfigurable Cmos Oscillator Using One Single Piezoelectric Aln Mems Resonator With Co-Existing S0 And S1 Lamb-Wave Modes, Chengjie Zuo, Jan Van Der Spiegel, Gianluca Piazza
Chengjie Zuo
For the first time, this work demonstrates a switch-less dual-frequency (472-MHz and 1.94-GHz) reconfigurable CMOS oscillator using a single piezoelectric AlN MEMS resonator with co-existing S0 and S1 Lamb-wave modes of vibration. High performances (high Q and kt2 for a resonator and low phase noise for an oscillator) have been achieved for both the resonator and oscillator in terms of dual-mode operation. Especially, the 1.94-GHz operation has the best phase noise performance when compared with all previously reported CMOS oscillators that work at a similar frequency.
Reconfigurable 4-Frequency Cmos Oscillator Based On Aln Contour-Mode Mems Resonators, Matteo Rinaldi, Chengjie Zuo, Jan Van Der Spiegel, Gianluca Piazza
Reconfigurable 4-Frequency Cmos Oscillator Based On Aln Contour-Mode Mems Resonators, Matteo Rinaldi, Chengjie Zuo, Jan Van Der Spiegel, Gianluca Piazza
Chengjie Zuo
This paper reports on the first demonstration of a reconfigurable Complementary Metal Oxide Semiconductor (CMOS) oscillator based on MicroElectroMechanical System (MEMS) resonators operating at 4 different frequencies (268, 483, 690 and 785 MHz). A bank of multi-frequency switchable AlN Contour-Mode MEMS resonators (CMRs) were connected to a single CMOS oscillator circuit that can be configured to selectively operate in 4 different states with distinct oscillation frequencies. The phase noise (PN) of the reconfigurable oscillator was measured for each of the 4 different frequencies of operation showing values between -94 and -70 dBc/Hz at 1 KHz offset and PN floor values …
1.5-Ghz Cmos Voltage-Controlled Oscillator Based On Thickness-Field-Excited Piezoelectric Aln Contour-Mode Mems Resonators, Chengjie Zuo, Jan Van Der Spiegel, Gianluca Piazza
1.5-Ghz Cmos Voltage-Controlled Oscillator Based On Thickness-Field-Excited Piezoelectric Aln Contour-Mode Mems Resonators, Chengjie Zuo, Jan Van Der Spiegel, Gianluca Piazza
Chengjie Zuo
This paper reports on the first demonstration of a 1.5 GHz CMOS oscillator based on thickness-field-excited (TFE) piezoelectric AlN MEMS contour-mode resonators (CMRs). The measured phase noise is −85 dBc/Hz at 10 kHz offset frequency and −151 dBc/Hz at 1 MHz. This is the highest frequency MEMS oscillator ever reported using a laterally vibrating mechanical resonator. The high frequency operation has been enabled by optimizing the geometrical design and micro-fabrication process of TFE AlN CMRs, so that a low effective motional resistance around 50 Ω is achieved together with a high unloaded quality factor (Qu) approaching 2500 and simultaneously high …
Multifrequency Pierce Oscillators Based On Piezoelectric Aln Contour-Mode Mems Technology, Chengjie Zuo, Nipun Sinha, Jan Van Der Spiegel, Gianluca Piazza
Multifrequency Pierce Oscillators Based On Piezoelectric Aln Contour-Mode Mems Technology, Chengjie Zuo, Nipun Sinha, Jan Van Der Spiegel, Gianluca Piazza
Chengjie Zuo
This paper reports on the first demonstration of multifrequency (176-, 222-, 307-, and 482-MHz) oscillators based on the piezoelectric AlN contour-mode microelectromechanical systems technology. All the oscillators show phase noise values between −88 and −68 dBc/Hz at 1-kHz offset frequency from the carriers and phase noise floor values as low as −160 dBc/Hz at 1-MHz offset. The same Pierce circuit design is employed to sustain oscillations at the four different frequencies; on the other hand, the oscillator core consumes 10 mW. The AlN resonators are currently wire bonded to the integrated circuit realized in the AMIS 0.5-μm 5-V complimentary metal-oxide-semiconductor …
1.05-Ghz Cmos Oscillator Based On Lateral-Field-Excited Piezoelectric Aln Contour-Mode Mems Resonators, Chengjie Zuo, Jan Van Der Spiegel, Gianluca Piazza
1.05-Ghz Cmos Oscillator Based On Lateral-Field-Excited Piezoelectric Aln Contour-Mode Mems Resonators, Chengjie Zuo, Jan Van Der Spiegel, Gianluca Piazza
Chengjie Zuo
This paper reports on the first demonstration of a 1.05-GHz microelectromechanical (MEMS) oscillator based on lateral-field-excited (LFE) piezoelectric AlN contour-mode resonators. The oscillator shows a phase noise level of −81 dBc/Hz at 1-kHz offset frequency and a phase noise floor of −146 dBc/Hz, which satisfies the global system for mobile communications (GSM) requirements for ultra-high frequency (UHF) local oscillators (LO). The circuit was fabricated in the AMI semiconductor (AMIS) 0.5-μm complementary metal-oxide-semiconductor (CMOS) process, with the oscillator core consuming only 3.5 mW DC power. The device overall performance has the best figure-of-merit (FoM) when compared with other gigahertz oscillators that …
1.05 Ghz Mems Oscillator Based On Lateral-Field-Excited Piezoelectric Aln Resonators, Chengjie Zuo, Jan Van Der Spiegel, Gianluca Piazza
1.05 Ghz Mems Oscillator Based On Lateral-Field-Excited Piezoelectric Aln Resonators, Chengjie Zuo, Jan Van Der Spiegel, Gianluca Piazza
Chengjie Zuo
This paper reports on the first demonstration of a 1.05 GHz microelectromechanical (MEMS) oscillator based on lateral-field-excited (LFE) piezoelectric Aluminum Nitride (AlN) contour-mode resonators. The oscillator shows a phase noise level of –81 dBc/Hz at 1 kHz offset frequency and a phase noise floor of –146 dBc/Hz, which satisfies the GSM requirements of Ultra High Frequency (UHF) local oscillators (LO). The circuit was fabricated in the AMIS 0.5 μm CMOS process, with the oscillator core consuming only 3.5 mW static power. A simple two-mask process was used to fabricate the LFE AlN resonators from 843 MHz to 1.64 GHz with …
Multi-Frequency Pierce Oscillators Based On Piezoelectric Aln Contour-Mode Mems Resonators, Chengjie Zuo, Nipun Sinha, Jan Van Der Spiegel, Gianluca Piazza
Multi-Frequency Pierce Oscillators Based On Piezoelectric Aln Contour-Mode Mems Resonators, Chengjie Zuo, Nipun Sinha, Jan Van Der Spiegel, Gianluca Piazza
Chengjie Zuo
This paper reports on the first demonstration of multi-frequency (176, 222, 307, and 482 MHz) oscillators based on piezoelectric AlN contour-mode MEMS resonators. All the oscillators show phase noise values between –88 and –68 dBc/Hz at 1 kHz offset and phase noise floors as low as –160 dBc/Hz at 1 MHz offset. The same Pierce circuit design is employed to sustain oscillations at the 4 different frequencies, while the oscillator core consumes at most 10 mW. The AlN resonators are currently wirebonded to the integrated circuit realized in the AMIS 0.5 μm 5 V CMOS process. This work constitutes a …