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New Jersey Institute of Technology

Thin films

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Full-Text Articles in Engineering

Design Of Mask For Striped Filters And Thin-Film Multi-Layer Emissivity Modeling For Multi-Wavelength Imaging Pyrometer, Jitesh Navinchandra Shah Oct 1993

Design Of Mask For Striped Filters And Thin-Film Multi-Layer Emissivity Modeling For Multi-Wavelength Imaging Pyrometer, Jitesh Navinchandra Shah

Theses

Multi-Wavelength Imaging Pyrometry (M-WIP) measures thermal radiation of any target (color or gray) in multiple narrow-spectral-regions and can simultaneously determine target temperature and emissivity. One approach for measuring radiation at multiple wavelengths using a 320X244 element Pt-Si SBD infrared camera is to use narrow-band striped filters deposited on a transparent substrate with proper alignment. The major focus of this thesis was the design of a four layer mask for investigating the feasibility of defining three-wavelength striped filters compatible with focal plane array. This mask design allows twelve distinct narrow band striped filter geometries and four test-patterns on a 4-inch silicon …


Synthesis And Characterization Of Silicon Nitride Film Deposited By Plasma Enhanced Chemical Vapor Deposition From Ditertiary-Butyl Silane, Kei-Turng Shih Dec 1991

Synthesis And Characterization Of Silicon Nitride Film Deposited By Plasma Enhanced Chemical Vapor Deposition From Ditertiary-Butyl Silane, Kei-Turng Shih

Theses

Ditertiary-butyl silane (DTBS) and ammonia have been used to deposit silicon nitride films by plasma enhanced chemical vapor deposition (PECVD) with ammonia. The films were deposited in the temperature range of 150 to 300 °C with 0.15 watts/cm2 plasma power density at 100 KHz. The NH3/DTBS ratio was varied from 1 to 18, the total flow rate was varied between 195 and 570 sccm with total pressure ranging from 0.2 to 0.6 torr.

The deposition rate of these films was found to increase as total pressure or total flow rate increases, but was found to decrease as …


Synthesis And Characterization Of Lpcvd Silicon Carbide Thin Films For X-Ray Lithography, Mahalingam Bhaskaran May 1991

Synthesis And Characterization Of Lpcvd Silicon Carbide Thin Films For X-Ray Lithography, Mahalingam Bhaskaran

Theses

Amorphous silicon carbide thin films were fabricated using low pressure chemical deposition method with a single liquid precursor, di tertiary butyl silane. The films were deposited for a temperature range of 500-850°C and at different pressures ranging from 0.05 to 1 torr. The growth rate of the films deposited at constant pressure of 0.2 torr with a flow rate of 60 sccm, was found to follow an Arrehenius Behavior in the temperature range of 600 - 675°C, yielding an activation energy of 32.5 k cal mol-1 . IR spectroscopic study showed an absorption peak centered at 780 cm-1 …