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The Hybridization Of A Graphene And Silicon Carbide Schottky Optoelectronic Device By The Incorporation Of A Lead Sulfide Quantum Dot Film, Joshua Letton
Theses and Dissertations
The work that follows examines the impact of lead sulfide quantum dots on a native epitaxial graphene (EG) SiC Schottky device, resulting in a hybrid optoelectronic device which presents a possible avenue towards a novel hybrid carbide-based Schottky solar cell. The active (n-type SiC) and contact (graphene) layers for the Schottky junction of the device were grown epitaxially using a novel technique incorporating tetrafluorosilane (TFS) as a precursor gas. The bare EG/SiC device was characterized based on its I-V behavior in dark and under illumination for both forward and reverse bias conditions. The initial characterization demonstrated the expected Schottky diode …