Engineering Commons^™

A Study On Controlling Power Supply Ramp-Up Time In Sram Pufs, Harshavardhan Ramanna

Masters Theses

With growing connectivity in the modern era, the risk of encrypted data stored in hardware being exposed to third-party adversaries is higher than ever. The security of encrypted data depends on the secrecy of the stored key. Conventional methods of storing keys in Non-Volatile Memory have been shown to be susceptible to physical attacks. Physically Unclonable Functions provide a unique alternative to conventional key storage. SRAM PUFs utilize inherent process variation caused during manufacturing to derive secret keys from the power-up values of SRAM memory cells.

This thesis analyzes the effect of supply ramp-up times on the reliability of SRAM …

Skybridge-3d-Cmos: A Fine-Grained Vertical 3d-Cmos Technology Paving New Direction For 3d Ic, Jiajun Shi

Doctoral Dissertations

2D CMOS integrated circuit (IC) technology scaling faces severe challenges that result from device scaling limitations, interconnect bottleneck that dominates power and performance, etc. 3D ICs with die-die and layer-layer stacking using Through Silicon Vias (TSVs) and Monolithic Inter-layer Vias (MIVs) have been explored in recent years to generate circuits with considerable interconnect saving for continuing technology scaling. However, these 3D IC technologies still rely on conventional 2D CMOS’s device, circuit and interconnect mindset showing only incremental benefits while adding new challenges reliability issues, robustness of power delivery network design and short-channel effects as technology node scaling. Skybridge-3D-CMOS (S3DC) is …

Managing And Leveraging Variations And Noise In Nanometer Cmos, Vikram B. Suresh

Doctoral Dissertations

Advanced CMOS technologies have enabled high density designs at the cost of complex fabrication process. Variation in oxide thickness and Random Dopant Fluctuation (RDF) lead to variation in transistor threshold voltage V_th. Current photo-lithography process used for printing decreasing critical dimensions result in variation in transistor channel length and width. A related challenge in nanometer CMOS is that of on-chip random noise. With decreasing threshold voltage and operating voltage; and increasing operating temperature, CMOS devices are more sensitive to random on-chip noise in advanced technologies. In this thesis, we explore novel circuit techniques to manage the impact of …