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Full-Text Articles in Physical Sciences and Mathematics
Control Of Majorana Edge Modes By A G-Factor Engineered Nanowire Spin Transistor, Amrit De, Alexey Kovalev
Control Of Majorana Edge Modes By A G-Factor Engineered Nanowire Spin Transistor, Amrit De, Alexey Kovalev
Department of Physics and Astronomy: Faculty Publications
We propose the manipulation of Majorana edge states via hybridization and spin currents in a nanowire spin transistor. The spin transistor is based on a heterostructure nanowire comprising of semiconductors with large and small g-factors that form the topological and non-topological regions respectively. The hybridization of bound edge states results in spin currents and 4π-periodic torques, as a function of the relative magnetic field angle – an effect which is dual to the fractional Josephson effect. We establish relation between torques and spin-currents in the non-topological region where the magnetic field is almost zero and spin is …
Two-Dimensional Electron Gases At The Surface Of Potassium Tantalate, Ben Pound
Two-Dimensional Electron Gases At The Surface Of Potassium Tantalate, Ben Pound
Browse All Undergraduate research
No abstract provided.
Below Gap Optical Absorption In Gaas Driven By Intense, Single-Cycle Coherent Transition Radiation, J. Goodfellow, Matthias Fuchs, D. Daranciang, S. Ghimire, F. Chen, H. Loos, D. A. Reis, A. S. Fisher, A. M. Lindenberg
Below Gap Optical Absorption In Gaas Driven By Intense, Single-Cycle Coherent Transition Radiation, J. Goodfellow, Matthias Fuchs, D. Daranciang, S. Ghimire, F. Chen, H. Loos, D. A. Reis, A. S. Fisher, A. M. Lindenberg
Matthias Fuchs Publications
Single-cycle terahertz fields generated by coherent transition radiation from a relativistic electron beam are used to study the high field optical response of single crystal GaAs. Large amplitude changes in the sub-band-gap optical absorption are induced and probed dynamically by measuring the absorption of a broad-band optical beam generated by transition radiation from the same electron bunch, providing an absolutely synchronized pump and probe geometry. This modification of the optical properties is consistent with strong-field-induced electroabsorption. These processes are pertinent to a wide range of nonlinear terahertz-driven lightmatter interactions anticipated at accelerator-based sources.
Cytotoxicity Of Zno Nanoparticles Can Be Tailored By Modifying Their Surface Structure: A Green Chemistry Approach For Safer Nanomaterials, Alex Punnoose, Kelsey Dodge, John W. Rasmussen, Jordan Chess, Denise Wingett, Catherine Anders
Cytotoxicity Of Zno Nanoparticles Can Be Tailored By Modifying Their Surface Structure: A Green Chemistry Approach For Safer Nanomaterials, Alex Punnoose, Kelsey Dodge, John W. Rasmussen, Jordan Chess, Denise Wingett, Catherine Anders
Physics Faculty Publications and Presentations
ZnO nanoparticles (NP) are extensively used in numerous nanotechnology applications; however, they also happen to be one of the most toxic nanomaterials. This raises significant environmental and health concerns and calls for the need to develop new synthetic approaches to produce safer ZnO NP, while preserving their attractive optical, electronic, and structural properties. In this work, we demonstrate that the cytotoxicity of ZnO NP can be tailored by modifying their surface-bound chemical groups, while maintaining the core ZnO structure and related properties. Two equally sized (9.26 ± 0.11 nm) ZnO NP samples were synthesized from the same zinc acetate precursor …
Temperature Dependence Of Defect-Related Photoluminescence In Iii-V And Ii-Vi Semiconductors, Michael A. Reshchikov
Temperature Dependence Of Defect-Related Photoluminescence In Iii-V And Ii-Vi Semiconductors, Michael A. Reshchikov
Physics Publications
Mechanisms of thermal quenching of photoluminescence (PL) related to defects insemiconductors are analyzed. We conclude that the Schön-Klasens (multi-center) mechanism of the thermal quenching of PL is much more common for defects in III–V and II–VI semiconductorsas compared to the Seitz-Mott (one-center) mechanism. The temperature dependencies of PLare simulated with a phenomenological model. In its simplest version, three types of defects are included: a shallow donor, an acceptor responsible for the PL, and a nonradiative center that has the highest recombination efficiency. The case of abrupt and tunable thermal quenching ofPL is considered in more detail. This phenomenon is predicted …
Time-Resolved Photoluminescence From Defects In N-Type Gan, Michael A. Reshchikov
Time-Resolved Photoluminescence From Defects In N-Type Gan, Michael A. Reshchikov
Physics Publications
Point defects in GaN were studied with time-resolved photoluminescence (PL). The effects of temperature and excitation intensity on defect-related PL have been investigated theoretically and experimentally. A phenomenological model, based on rate equations, explains the dependence of the PL intensity on excitation intensity, as well as the PL lifetime and its temperature dependence. We demonstrate that time-resolved PL measurements can be used to find the concentrations of free electrons and acceptors contributing to PL in n-type semiconductors.