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Silicon (2p) Surface Core-Level Line Shape Of Si(111)—B, J. E. Rowe, G. K. Wertheim, D. Mark Riffe

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Several recent structural studies of the Si(111)–B ((3)^1/2×(3)^1/2) surface have established that the boron atoms occupy substitutional sites in the second full Si layer and have Si adatoms directly above them. High‐resolution (∼80–100 meV) Si(2p) core‐level photoemission was used to determine the B‐induced perturbation of the surface Si atoms. The samples were prepared by surface segregation from Si(111) wafers (∼1.5 at. % B) after thermally removing the thin protective oxide layer on the surface. Photoemission spectra for photon energies from 110 to 140 eV show three peaks, indicative of at least two well‐separated spin‐orbit …