Physical Sciences and Mathematics Commons^™

Synthesis Of Molybdenum Containing Thin Films Using Organic Reducing Agents And Synthesis Of Magnesium Silyl Intermediate Complexes For Use In Atomic Layer Deposition, Michael David Overbeek

Wayne State University Dissertations

Thin films of a variety of materials have shown great potential in the fields of microelectronics, catalysis, and energy applications. Vapor deposition methods, including PVD and CVD, have been traditionally used as the primary method to deposit these thin films. However, these methods do not provide the necessary thickness uniformity and conformality needed for future uses of these thin films as they shrink to smaller dimensions. ALD provides a high degree of uniformity and conformality due to the intrinsic nature of the self-limited reaction mechanism of an ALD process.

The research herein focuses on two metals that have untapped potential …

New Chemistry For The Growth Of First-Row Transition Metal Films By Atomic Layer Deposition, Joseph Peter Klesko

Wayne State University Dissertations

Thin films containing first-row transition metals are widely used in microelectronic, photovoltaic, catalytic, and surface-coating applications. In particular, metallic films are essential for interconnects and seed, barrier, and capping layers in integrated circuitry. Traditional vapor deposition methods for film growth include PVD, CVD, or the use of plasma. However, these techniques lack the requisite precision for film growth at the nanoscale, and thus, are increasingly inadequate for many current and future applications. By contrast, ALD is the favored approach for depositing films with absolute surface conformality and thickness control on 3D architectures and in high aspect ratio features. However, the …

Precursors And Processes For The Growth Of Metallic First Row Transition Metal Films By Atomic Layer Deposition, Lakmal Charidu Kalutarage

Wayne State University Dissertations

As a result of the continuous miniaturization of microelectronics devices, atomic layer deposition (ALD) has gained much attention in the recent years. ALD allows the deposition of ultra-thin conformal films with accurate thickness control due to the self-limiting growth mechanism. The microelectronics industry requires the growth of metallic first row transition metal films by ALD. Due to the positive electrochemical potentials, the ALD growth of noble metal thin films has been well developed in the past. By contrast, the ALD growth of first row transition metal films remains poorly documented. The reasons for this scarcity include the lack of suitable …

Synthesis And Characterization Of Group 5 Metal Complexes Containing Pyrazolate, Amidate, And Related Ligands As Potential Precursors For Thin Film Growth By Atomic Layer Deposition, Thuduwage Hiran Perera

Wayne State University Dissertations

Atomic Layer Deposition (ALD) is an advanced variant of Chemical Vapor Deposition (CVD) and is used to deposit smooth and conformal thin films for applications in the microelectronics industry. ALD requires metal precursors that are sufficiently volatile and thermally stable at elevated temperatures. Several group 5 ALD and CVD precursors were reported in the literature, which have been used to deposit TaN, NbN, Nb2O5, and Ta2O5 thin films. Synthesis of low and mid valent group 5 metal ALD precursors might give us access to deposit NbO2, Nb2O3, Ta2O3, and TaO2 thin films by low temperature ALD pathways upon applying mild …

The Synthesis, Structure, And Properties Of Group 2 Poly(Pyrazolyl)Borates And Their Use For The Atomic Layer Deposition Of Group 2 Borates, Mark J. Saly

Wayne State University Dissertations

A series of heavy alkaline earth complexes containing TpR2-based ligands has been synthesized, structurally characterized, and their properties were investigated. Salt metathesis routes involving MI2 (M = Ca, Sr, Ba) with either KTpEt2 or KTpnPr2 afforded MTpEt22 or MTpnPr22 in good to moderate yields. All of these complexes are volatile and exceptionally thermally stable, and have acceptable properties for use as group 2 atomic layer deposition (ALD) precursors. In addition, a series of group 2 complexes containing BpR2-based ligand systems were synthesized. Treatment of MI2 (M = Ca, Sr, Ba) with two equivalents of TlBptBu2, KBp, and KBpiPr2 in tetrahydrofuran …