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Full-Text Articles in Physical Sciences and Mathematics
Physical Mechanisms Leading To The Coulomb Blockade And Coulomb Staircase Structures In Strongly Coupled Multi-Island Single-Electron Devices, Madhusudan A. Savaikar, John A. Jaszczak, Paul L. Bergstrom
Physical Mechanisms Leading To The Coulomb Blockade And Coulomb Staircase Structures In Strongly Coupled Multi-Island Single-Electron Devices, Madhusudan A. Savaikar, John A. Jaszczak, Paul L. Bergstrom
Paul Bergstrom
No abstract provided.
Physical Mechanisms Leading To The Coulomb Blockade And Coulomb Staircase Structures In Strongly Coupled Multi-Island Single-Electron Devices, Madhusudan A. Savaikar, John A. Jaszczak, Paul L. Bergstrom
Physical Mechanisms Leading To The Coulomb Blockade And Coulomb Staircase Structures In Strongly Coupled Multi-Island Single-Electron Devices, Madhusudan A. Savaikar, John A. Jaszczak, Paul L. Bergstrom
John Jaszczak
No abstract provided.
Adaptive Circuits Using Pfet Floating-Gate Devices, Paul Hasler, Bradley Minch, Chris Diorio
Adaptive Circuits Using Pfet Floating-Gate Devices, Paul Hasler, Bradley Minch, Chris Diorio
Bradley Minch
In this paper, we describe our floating-gate pFET device, with its many circuit applications and supporting experimental measurements. We developed these devices in standard double-poly CMOS technologies by utilizing many effects inherent in these processes. We add floating-gate charge by electron tunneling, and we remove floating-gate charge by hot-electron injection. With this floating-gate technology, we cannot only build analog EEPROMs, we can also implement adaptation and learning when we consider floating-gate devices to be circuit elements with important time-domain dynamics. We start by discussing non-adaptive properties of floating-gate devices and we present two representative non-adaptive applications. First, we discuss using …
Nanoscale Patterning And Oxidation Of H-Passivated Si(100)-2x1 Surfaces With An Ultrahigh Vacuum Scanning Tunneling Microscope, J. W. Lyding, T. -C. Shen, J. S. Hubaceck, J. R. Tucker, G. C. Abeln
Nanoscale Patterning And Oxidation Of H-Passivated Si(100)-2x1 Surfaces With An Ultrahigh Vacuum Scanning Tunneling Microscope, J. W. Lyding, T. -C. Shen, J. S. Hubaceck, J. R. Tucker, G. C. Abeln
T. -C. Shen
Nanoscale patterning of the hydrogen terminated Si(100)‐2×1 surface has been achieved with an ultrahigh vacuum scanning tunneling microscope.Patterning occurs when electrons field emitted from the probe locally desorb hydrogen, converting the surface into clean silicon. Linewidths of 1 nm on a 3 nm pitch are achieved by this technique. Local chemistry is also demonstrated by the selective oxidation of the patterned areas. During oxidation, the linewidth is preserved and the surrounding H‐passivated regions remain unaffected, indicating the potential use of this technique in multistep lithography processes.