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Full-Text Articles in Physical Sciences and Mathematics
Towards Novel Entangled Carbon Nanotube Composite Electrodes, Gordon G. Wallace, P. Sherrell, J. Chen, A. Minett
Towards Novel Entangled Carbon Nanotube Composite Electrodes, Gordon G. Wallace, P. Sherrell, J. Chen, A. Minett
Gordon Wallace
The commercialization of carbon nanotube electrodes is impeded by the lack of bulk processing techniques. One approach to overcome this impediment is the growth of macroscopic CNT composite architectures which do not require any extra processing. Unfortunately the fundamental growth mechanisms of these carbon composites is not currently understood. To probe this mechanism a systematic examination of the effect of certain growth parameters was undertaken. Within this paper we present the promising preliminary findings of this study revealing extremely complex relationships between variables during growth. We also present the performance of the produced architectures as capacitor electrodes and the further …
Investigation Of Electrical Transport In Hydrogenated Multiwalled Carbon Nanotubes, Adam Friedman, Hyunkyung Chun, Don Heiman, Yung Jung, Latika Menon
Investigation Of Electrical Transport In Hydrogenated Multiwalled Carbon Nanotubes, Adam Friedman, Hyunkyung Chun, Don Heiman, Yung Jung, Latika Menon
Latika Menon
Highly disordered multiwalled carbon nanotubes of large outer diameter (~60 nm) fabricated by means of chemical vapor deposition process inside porous alumina templates exhibit ferromagnetism when annealed in a H2/Ar atmosphere. In the presence of an applied magnetic field, there is a transition from positive to negative magnetoresistance. The transition may be explained in terms of the Bright model for ordered and disordered carbon structures. Additionally, temperature dependent electrical transport experiments exhibit a zero-bias anomaly at low temperature.
Molecular Beam Epitaxy Approach To The Graphitization Of Gaas(100) Surfaces, Paul J. Simmonds, John Simon, Jerry M. Woodall, Minjoo Larry Lee
Molecular Beam Epitaxy Approach To The Graphitization Of Gaas(100) Surfaces, Paul J. Simmonds, John Simon, Jerry M. Woodall, Minjoo Larry Lee
Paul J. Simmonds
The authors present a method for obtaining graphitized carbon on GaAs(100) surfaces. Carbon-doped GaAs is grown by molecular beam epitaxy before controlled thermal etching within the growth chamber. An AlAs layer beneath the carbon-doped GaAs acts as a thermal etch stop. As the GaAs is etched away, the carbondopant atoms remain on the surface due to their low vapor pressure. The total number of carbon atoms available is precisely controllable by the doping density and thickness of the carbon-doped GaAs layer. Characteristic phonon modes in Raman spectra from the thermally etchedsurfaces show that the residual surfacecarbon atoms form sp2 …
Graphitized Carbon On Gaas(100) Substrates, J. Simon, P. J. Simmonds, J. M. Woodall, M. L. Lee
Graphitized Carbon On Gaas(100) Substrates, J. Simon, P. J. Simmonds, J. M. Woodall, M. L. Lee
Paul J. Simmonds
We report on the formation of graphitized carbon on GaAs(100) surfaces by molecular beam epitaxy. We grew highly carbon-doped GaAs on AlAs, which was then thermally etched in situ leaving behind carbon atoms on the surface. After thermal etching, Raman spectra revealed characteristic phonon modes for sp2-bonded carbon, consistent with the formation of graphitic crystallites. We estimate that the graphitic crystallites are 1.5–3 nm in size and demonstrate that crystallite domain size can be increased through the use of higher etch temperatures.