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Composition Dependence Of Photoconductivity In Amorphous Thin Films Of Se_{.80-X}Te_{.20}Ge_X, Deepak Kumar, Santosh Kumar
Composition Dependence Of Photoconductivity In Amorphous Thin Films Of Se_{.80-X}Te_{.20}Ge_X, Deepak Kumar, Santosh Kumar
Turkish Journal of Physics
The present paper reports the dependence on composition of photoconductivity in vacuum evaporated thin films of amorphous Se_{.80-x}Te_{.20}Ge_x (x = .05, .10, .15 and .20). Temperature dependence of conductivity in dark as well as in presence of light show that conduction is through a thermally activated process in both cases. The activation energy is found to decrease with increase in light intensity, indicating shift of the Fermi level with intensity. A correlation between activation energy and the pre-exponential factor is observed in all the compositions, which could be fitted to the Meyer-Neldel rule. Measurements on the dependence of photoconductivity on …
Photoconductivity Of Selenium And Sulphur Doped A-Si:H Thin Films, Sanjeev Kumar Sharma, Himanshu Gupta, Rajendra Kumar, Ram Mohan Mehra
Photoconductivity Of Selenium And Sulphur Doped A-Si:H Thin Films, Sanjeev Kumar Sharma, Himanshu Gupta, Rajendra Kumar, Ram Mohan Mehra
Turkish Journal of Physics
This paper presents a study of photoconductivity of S- and Se-doped a-Si:H as a function of composition and temperature. Temperature dependence of photoconductivity of the films was measured under the illumination of white light at 100~mW/cm^2. The room temperature photoconductivity for the same doping concentration of 10^{-4} (to develop H_2Se/SiH_4 and H_2S/SiH_4) is found to be higher in Se-doped -- than S-doped -- a-Si:H film due to a low defect density. From the measurement of intensity dependence of photoconductivity, it is found that the addition of Se and S changes the recombination mechanism from monomolecular, for low-doped films, to bimolecular …