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Full-Text Articles in Physical Sciences and Mathematics
Dielectric Relaxation In Glassy Se_{100 - X} Sb_X, N. Choudhary, A. Kumar
Dielectric Relaxation In Glassy Se_{100 - X} Sb_X, N. Choudhary, A. Kumar
Turkish Journal of Physics
Frequency and temperature dependence of dielectric constant \varepsilon' and dielectric loss \varepsilon'' are studied in glassy Se_{1-x} Sb_x (x = 0, 0.02, 0.04, 0.06, 0.08 and 0.10) in the frequency range from 1--10 kHz and in the temperature range 290 K to 360 K. The experimental results indicate that no dielectric dispersion exist in glassy Se in the operating range of frequencies. However, when Sb concentration increases in Se_{1-x} Sb_x (x = 0.02, 0.04, 0.06, 0.08 and 0.10) dielectric dispersion starts in the upper frequency and temperature range. The values of \varepsilon' and \varepsilon'', as functions of temperature and frequency, …
Calorimetric Studies On Se_{0.68}Ge_{0.22}M_{0.10} (M = Cd, In, Pb) Chalcogenide Glasses, N. Mehta, P. Agarwal, A. Kumar
Calorimetric Studies On Se_{0.68}Ge_{0.22}M_{0.10} (M = Cd, In, Pb) Chalcogenide Glasses, N. Mehta, P. Agarwal, A. Kumar
Turkish Journal of Physics
Differential scanning calorimetry (DSC) is performed at different heating rates under non-isothermal conditions to calculate the activation energy of crystallization E_c for chalcogenide glasses Se_{0.68}Ge_{0.22}M_{0.10} (M = Cd, In and Pb) using the well known Kissinger's relation, Matusita-Sakka theory and the method of Augis-Bennett. The overall mean bond energy of these glassy alloys has been evaluated using theory of Tichy and Ticha. A good correlation has been found between E_c and . This indicates that the overall mean bond energy plays an important role in the thermal crystallization of chalcogenide glasses.
Study Of Density Of Localized States In A-Se_{100 - X}Sb_X Films By Space Charge Limited Conduction Measurements, V. S. Kushwaha, Santosh Kumar, A. Kumar
Study Of Density Of Localized States In A-Se_{100 - X}Sb_X Films By Space Charge Limited Conduction Measurements, V. S. Kushwaha, Santosh Kumar, A. Kumar
Turkish Journal of Physics
The present paper reports dc conductivity measurements at high electric fields in vacuum evaporated a-Se_{1 - x}Sb_x (x = 0, 0.02, 0.04, 0.06) thin films. At high fields (~ 10^4 V .cm^{-1}), current can be modelled by the theory of space charge-limited conduction in the case of uniform distribution of localised states in the mobility gap of these materials. The addition of Sb in Se results in an increase in the density of localised states.