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Full-Text Articles in Physical Sciences and Mathematics
Voltage Droop Analysis And Mitigation In Sttram-Based Last Level Cache, Radha Krishna Aluru
Voltage Droop Analysis And Mitigation In Sttram-Based Last Level Cache, Radha Krishna Aluru
USF Tampa Graduate Theses and Dissertations
Preferred especially for a Last Level Cache (LLC) due to its high retention and tolerance capabilities, Spin-Transfer Torque Random Access Memory (STTRAM) is an emerging and a promising Non-Volatile Memory (NVM) technology. To switch the magnetization of a Magnetic Tunnel Junction (MTJ), the amount of current needed is very high (~100μA per bit). For a full cache line (512-bit) write, this extremely high current results in a voltage droop in the conventional cache architecture. Due to this droop, the write operation fails especially when the farthest bank of the cache is accessed. In this thesis, we perform an analysis of …
Enhancement Of Supercapacitor Energy Storage By Leakage Reduction And Electrode Modification, Tete Tevi
Enhancement Of Supercapacitor Energy Storage By Leakage Reduction And Electrode Modification, Tete Tevi
USF Tampa Graduate Theses and Dissertations
Supercapacitors have emerged in recent years as a promising energy storage technology. The main mechanism of energy storage is based on electrostatic separation of charges in a region at the electrode-electrolyte interface called double layer. Various electrode materials including carbon and conducting polymers have been used in supercapacitors. Also, supercapacitors offer high life cycle and high power density among electrochemical energy storage devices. Despite their interesting features, supercapacitors present some disadvantages that limit their competitivity with other storage devices in some applications. One of those drawbacks is high self-discharge or leakage. The leakage occurs when electrons cross the double layer …