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Turkish Journal of Physics

Journal

2018

Quantum dot

Articles 1 - 2 of 2

Full-Text Articles in Physical Sciences and Mathematics

Analysis Of Quantum-Dot-Embedded Multicavity Arrays For On-Chip Wdm Applications, Havva Erdi̇nç, Serdar Kocaman Jan 2018

Analysis Of Quantum-Dot-Embedded Multicavity Arrays For On-Chip Wdm Applications, Havva Erdi̇nç, Serdar Kocaman

Turkish Journal of Physics

Transmission and group delay characteristics of a single-quantum-dot-(QD)-embedded double-cavity array and a triple-cavity array are compared theoretically in the weak coupling regime. When the extrinsic cavity decay rate is comparably higher than the intrinsic cavity decay rate at equal coupling strengths and normalized detuning values, transmission values of both systems converge with each other but the phase delay generated at triple-cavity systems is higher than that of the single-QD-embedded double-cavity array system. The results confirmed by the transmission calculations for both cases provide a comparative tool for designing on chip wavelength division multiplexing systems.


Electrochemical Capacitance-Voltage Profiling Of Nonuniformly Doped Gaas Heterostructures With Sqws And Mqws For Led Applications, George Yakovlev, Vasily Zubkov, Anna Solomnikova, Oleg Derevianko Jan 2018

Electrochemical Capacitance-Voltage Profiling Of Nonuniformly Doped Gaas Heterostructures With Sqws And Mqws For Led Applications, George Yakovlev, Vasily Zubkov, Anna Solomnikova, Oleg Derevianko

Turkish Journal of Physics

Light-emitting heterostructures with single and multiple GaAs/InGaAs quantum wells have been investigated by means of electrochemical capacitance-voltage (ECV) profiling. Capacitance-voltage characteristics were measured; concentration profiles of free charge carriers over the heterostructure depth as well as the intensity of quantum well filling by charge carriers were obtained. In heterostructures with a single quantum well (QW), we considered limitations of capacitance techniques for undoped QW profiling, which are situated near the metallurgic border of the p-n junction. We made a detailed consideration of phenomena related to Debye smearing and we developed and analyzed the dependence of the space charge region width …