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Full-Text Articles in Physical Sciences and Mathematics
Vertical Nanowire Transistors With Low Leakage Current, Jie Chen, M. C. Lux-Steiner, Rolf Kӧnenkamp, S. Klaumünzer
Vertical Nanowire Transistors With Low Leakage Current, Jie Chen, M. C. Lux-Steiner, Rolf Kӧnenkamp, S. Klaumünzer
Physics Faculty Publications and Presentations
A vertical field-effect transistor based on semiconductor nanowires is reported. The fabrication of the device uses a self-supporting flexible nanostructured polymer foil as a template and an electrochemical growth technique for the preparation of the semiconductor. The fabrication process is substantially simpler, and the mechanical robustness is strongly increased as compared to the original device. The channel region of the transistor has a diameter of ∼100 nm and a length of ∼50 nm. Operation in the hole depletion mode allows a change of the transfer conductance by ∼50% when the gate voltages is changed in the range ∓1 V. The …
Vertical Nanowire Transistor In Flexible Polymer Foil, Jie Chen, Rolf Könenkamp
Vertical Nanowire Transistor In Flexible Polymer Foil, Jie Chen, Rolf Könenkamp
Physics Faculty Publications and Presentations
Fabrication and operation of a vertical nanowire field-effect transistor is reported. The device is prepared by growing vertical wires in the cylindrical pores of a polymer foil stack. The nanowirediameter is approximately 100 nm, the packing density up to 10⁸ cm⁻². The polymer foil stack consists of two polymer layers and an intermediate metal layer. Cylindrical holes are prepared in this stack by using fast ion irradiation and subsequent etching. Well-defined cylindrical openings with diameters between 50 and 150 nm are obtained. The semiconductor growth involves electrodeposition of the p-type quaternary compound CuSCN. Electrical measurements on first devices show transistor …