Open Access. Powered by Scholars. Published by Universities.®
Physical Sciences and Mathematics Commons™
Open Access. Powered by Scholars. Published by Universities.®
Articles 1 - 5 of 5
Full-Text Articles in Physical Sciences and Mathematics
Single-Photon Generation From Self-Assembled Gaas/Inalas(111)A Quantum Dots With Ultrasmall Fine-Structure Splitting, Christopher F. Schuck, Robert Boutelle, Kevin Silverman, Galan Moody, Paul J. Simmonds
Single-Photon Generation From Self-Assembled Gaas/Inalas(111)A Quantum Dots With Ultrasmall Fine-Structure Splitting, Christopher F. Schuck, Robert Boutelle, Kevin Silverman, Galan Moody, Paul J. Simmonds
Physics Faculty Publications and Presentations
We present a novel semiconductor single-photon source based on tensile-strained (111)-oriented GaAs/InAlAs quantum dots (QDs) exhibiting ultrasmall exciton fine-structure splitting (FSS) of ≤ 8 µeV. Using low-temperature micro-photoluminescence spectroscopy, we identify the biexciton-exciton radiative cascade from individual QDs, which, combined with small FSS, indicates these self-assembled GaAs(111) QDs are excellent candidates for polarization-entangled photon-pair generation.
Strain-Driven Quantum Dot Self-Assembly By Molecular Beam Epitaxy, Kathryn E. Sautter, Kevin D. Vallejo, Paul J. Simmonds
Strain-Driven Quantum Dot Self-Assembly By Molecular Beam Epitaxy, Kathryn E. Sautter, Kevin D. Vallejo, Paul J. Simmonds
Physics Faculty Publications and Presentations
Research into self-assembled semiconductor quantum dots (QDs) has helped advance numerous optoelectronic applications, ranging from solid-state lighting to photodetectors. By carefully controlling molecular beam epitaxy (MBE) growth parameters, we can readily tune QD light absorption and emission properties to access a broad portion of the electromagnetic spectrum. Although this field is now sufficiently mature that QDs are found in consumer electronics, research efforts continue to expand into new areas. By manipulating MBE growth conditions and exploring new combinations of materials, substrate orientations, and the sign of strain, a wealth of opportunities exist for synthesizing novel QD nanostructures with hitherto unavailable …
Quantum Dot Growth On (111) And (110) Surfaces Using Tensile-Strained Self-Assembly, Paul J. Simmonds
Quantum Dot Growth On (111) And (110) Surfaces Using Tensile-Strained Self-Assembly, Paul J. Simmonds
Physics Faculty Publications and Presentations
The self-assembly of epitaxial quantum dots on (001) surfaces, driven by compressive strain, is a widely used tool in semiconductor optoelectronics. In contrast, the growth of quantum dots on (111) and (110) surfaces has historically been a significant challenge. In most cases the strain relaxes rapidly via dislocation nucleation and glide before quantum dots can form. In this paper, we discuss a method for the reliable and controllable self-assembly of quantum dots on both (111) and (110) surfaces, where tensile strain is now the driving force. By showing that tensile-strained self-assembly is applicable to several material systems, we demonstrate the …
Hybrid Type-I Inas/Gaas And Type-Ii Gasb/Gaas Quantum Dot Structure With Enhanced Photoluminescence, Hai-Ming Ji, Baolai Liang, Paul J. Simmonds, Bor-Chau Juang, Tao Yang, Robert J. Young, Diana L. Huffaker
Hybrid Type-I Inas/Gaas And Type-Ii Gasb/Gaas Quantum Dot Structure With Enhanced Photoluminescence, Hai-Ming Ji, Baolai Liang, Paul J. Simmonds, Bor-Chau Juang, Tao Yang, Robert J. Young, Diana L. Huffaker
Physics Faculty Publications and Presentations
We investigate the photoluminescence (PL) properties of a hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot (QD) structure grown in a GaAs matrix by molecular beam epitaxy. This hybrid QD structure exhibits more intense PL with a broader spectral range, compared with control samples that contain only InAs or GaSb QDs. This enhanced PL performance is attributed to additional electron and hole injection from the type-I InAs QDs into the adjacent type-II GaSb QDs. We confirm this mechanism using time-resolved and power-dependent PL.These hybrid QD structures show potential for high efficiency QD solar cell applications.
Strain-Driven Growth Of Gaas(111) Quantum Dots With Low Fine Structure Splitting, Paul J. Simmonds
Strain-Driven Growth Of Gaas(111) Quantum Dots With Low Fine Structure Splitting, Paul J. Simmonds
Physics Faculty Publications and Presentations
Symmetric quantum dots (QDs) on (111)-oriented surfaces are promising candidates for generating polarization-entangled photons due to their low excitonic fine structure splitting(FSS). However, (111) QDs are difficult to grow. The conventional use of compressive strain to drive QD self-assembly fails to form 3D nanostructures on (111) surfaces. Instead, we demonstrate that (111) QDs self-assemble under tensile strain by growing GaAs QDs on an InP(111)A substrate. Tensile GaAs self-assembly produces a low density of QDs with a symmetric triangular morphology. Coherent, tensile QDs are observed without dislocations, and the QDs luminescence at room temperature. Single QD measurements reveal low FSS with …