Open Access. Powered by Scholars. Published by Universities.®
Physical Sciences and Mathematics Commons™
Open Access. Powered by Scholars. Published by Universities.®
Articles 1 - 3 of 3
Full-Text Articles in Physical Sciences and Mathematics
Recovery Time Scales In A Reversed-Biased Quantum Dot Absorber, T. Piwonski, Gillian Madden, Jaroslaw Pulka, Guillaume Huyet, Et. Al.
Recovery Time Scales In A Reversed-Biased Quantum Dot Absorber, T. Piwonski, Gillian Madden, Jaroslaw Pulka, Guillaume Huyet, Et. Al.
Physical Sciences Publications
The nonlinear recovery of quantum dot based reverse-biased waveguide absorbers is investigated both experimentally and analytically. We show that the recovery dynamics consists of a fast initial layer followed by a relatively slow decay. The fast recovery stage is completely determined by the intradot properties, while the slow stage depends on the escape from the dot to the wetting layer.
The Fast Recovery Dynamics Of A Quantum Dot Semiconductor Optical Amplifier, T. Piwonski, Guillaume Huyet, Et. Al.
The Fast Recovery Dynamics Of A Quantum Dot Semiconductor Optical Amplifier, T. Piwonski, Guillaume Huyet, Et. Al.
Physical Sciences Publications
We consider a rate equation model of a quantum dot semiconductor optical amplifier that takes into account carrier capture, escape, and Pauli blocking processes. We evaluate possible differences between phonon-assisted or Auger processes being dominant for recovery. An analytical solution which corresponds to phonon-assisted interaction is then used to accurately fit experimental recovery curves and allows an estimation of both the carrier capture and escape rates.
Intradot Dynamics Of Inas Quantum Dot Based Electroabsorbers, T. Piwonski, Jaroslaw Pulka, Gillian Madden, Guillaume Huyet, Et. Al.
Intradot Dynamics Of Inas Quantum Dot Based Electroabsorbers, T. Piwonski, Jaroslaw Pulka, Gillian Madden, Guillaume Huyet, Et. Al.
Physical Sciences Publications
The carrier relaxation and escape dynamics of InAs/GaAs quantum dot waveguide absorbers is studied using heterodyne pump-probe measurements. Under reverse bias conditions, we reveal differences in intradot relaxation dynamics, related to the initial population of the dots’ ground or excited states. These differences can be attributed to phonon-assisted or Auger processes being dominant for initially populated ground or excited states, respectively.