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Full-Text Articles in Physical Sciences and Mathematics
Phase Dynamics Of Inas/Gaas Quantum Dot Semiconductor Optical Amplifiers, T. Piwonski, Guillaume Huyet, Et. Al.
Phase Dynamics Of Inas/Gaas Quantum Dot Semiconductor Optical Amplifiers, T. Piwonski, Guillaume Huyet, Et. Al.
Physical Sciences Publications
The gain and phase dynamics of InAs∕GaAs quantum dot amplifiers are studied using single and two-color heterodyne pump probe spectroscopy. The relaxation of the wetting layer carrier density is shown to have a strong effect on the phase dynamics of both ground and excited state transients, while having a much weaker effect on the gain dynamics. In addition, the dynamical alpha factor may also display a constant value after an initial transient. Such behavior is strongly encouraging for reduced pattern effect operation in high speed optical networks.
Electron And Hole Dynamics Of Inas∕Gaasinas∕Gaas Quantum Dot Semiconductor Optical Amplifiers, I. O'Driscoll, T. Piwonski, C. F. Schleussner, J. Houlihan, G. Huyet, R. J. Manning
Electron And Hole Dynamics Of Inas∕Gaasinas∕Gaas Quantum Dot Semiconductor Optical Amplifiers, I. O'Driscoll, T. Piwonski, C. F. Schleussner, J. Houlihan, G. Huyet, R. J. Manning
Physical Sciences Publications
Single-color and two-color pump-probe measurements are used to analyze carrier dynamics in InAs∕GaAs quantum dot amplifiers. The study reveals that hole recovery and intradot electron relaxation occur on a picosecond time scale, while the electron capture time is on the order of 10ps. A longer time scale of hundreds of picoseconds is associated with carrier recovery in the wetting layer, similar to that observed in quantum well semiconductor amplifiers.
Carrier Capture Dynamics Of Inas/Gaas Quantum Dots, T. Piwonski, I. O'Driscoll, J. Houlihan, G. Huyet, R. J. Manning, A. V. Uskov
Carrier Capture Dynamics Of Inas/Gaas Quantum Dots, T. Piwonski, I. O'Driscoll, J. Houlihan, G. Huyet, R. J. Manning, A. V. Uskov
Physical Sciences Publications
Carrier dynamics of a 1.3μm InAs∕GaAs quantum dot amplifier is studied using heterodyne pump-probe spectroscopy. Measurements of the recovery times versus injection current reveal a power law behavior predicted by a quantum dot rate equation model. These results indicate that Auger processes dominate the carrier dynamics.
Very High Energy Observations Of Gamma-Ray Burst Locations With The Whipple Telescope, P. T. Reynolds, Et. Al.
Very High Energy Observations Of Gamma-Ray Burst Locations With The Whipple Telescope, P. T. Reynolds, Et. Al.
Physical Sciences Publications
Gamma-ray burst (GRB) observations at very high energies (VHE; E > 100 GeV) can impose tight constraints on some GRB emission models. Many GRB afterglow models predict a VHE component similar to that seen in blazars and plerions, in which the GRB spectral energy distribution has a double-peaked shape extending into the VHE regime. VHE emission coincident with delayed X-ray flare emission has also been predicted. GRB follow-up observations have had high priority in the observing program at the Whipple 10 m gamma-ray telescope, and GRBs will continue to be high-priority targets as the next-generation observatory, VERITAS, comes online. Upper limits …