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Electron Transfer During Metal-Assisted And Stain Etching Of Silicon, Kurt W. Kolasinski
Electron Transfer During Metal-Assisted And Stain Etching Of Silicon, Kurt W. Kolasinski
Chemistry Faculty Publications
The etching of silicon in fluoride solutions is limited by the kinetics of charge transfer not thermodynamics. This characteristic is what gives fluoride etching its great versatility in making different types of nanostructures as the result of self-limiting chemistry. This review approaches the kinetics of electron transfer from silicon and metal coated silicon to a solution phase species from a fundamental point of view in order to establish a better understanding of the mechanisms of nanostructure formation during metal assisted and stain etching of silicon. Band bending calculations demonstrate that diffusion of holes away from low work function metals such …
The Stoichiometry Of Metal Assisted Etching (Mae) Of Si In V2o5 + Hf And Hooh + Hf Solutions, Kurt W. Kolasinski, William B. Barclay, Yu Sun, Mark Aindow
The Stoichiometry Of Metal Assisted Etching (Mae) Of Si In V2o5 + Hf And Hooh + Hf Solutions, Kurt W. Kolasinski, William B. Barclay, Yu Sun, Mark Aindow
Chemistry Faculty Publications
No abstract provided.