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Articles 1 - 14 of 14
Full-Text Articles in Physical Sciences and Mathematics
Spin Splitting Of Donor-Bound Excitons In Zno Due To Combined Stress And Spin Exchange, D. C. Reynolds, David C. Look, B. Jogai, T. C. Collins
Spin Splitting Of Donor-Bound Excitons In Zno Due To Combined Stress And Spin Exchange, D. C. Reynolds, David C. Look, B. Jogai, T. C. Collins
Physics Faculty Publications
No abstract provided.
Upper Limits To The Outflow Of Ions At Mars: Implications For Atmospheric Evolution, Jane L. Fox
Upper Limits To The Outflow Of Ions At Mars: Implications For Atmospheric Evolution, Jane L. Fox
Physics Faculty Publications
Escape of ions is potentially important for the evolution of volatiles on Mars, but the mechanisms and rates of ion escape processes are not fully understood. Instruments on the Russian Phobos 2 orbiter have, however, measured fluxes of heavy ions apparently of ionospheric origin in the optical shadow of Mars. These ions are assumed to arise from escape processes induced by the interaction of the solar wind with the ionosphere. We determine here upper limits to the ion loss rates by imposing upward flux boundary conditions on models of the low and high solar activity Mars ionosphere. The maximum fluxes …
Spectrum Of Hot O At The Exobases Of The Terrestrial Planets, Jane L. Fox, Aleksander B. Hać
Spectrum Of Hot O At The Exobases Of The Terrestrial Planets, Jane L. Fox, Aleksander B. Hać
Physics Faculty Publications
The distribution of energetic O produced in dissociative recombination of O2+ at the exobases of the terrestrial planets is important in determining the structure of the outer hot O coronas and for the escape flux of O from Mars. Using recently measured values for the branching ratios of the energetically allowed channels in O2+ dissociative recombination, along with models of the vibrational distribution of O2+, we compute the velocity distribution of hot O atoms produced at the exobases of Mars, Venus, and Earth. We take into account the effects of the ion and …
Hydrocarbon Ions In The Ionosphere Of Titan, Jane L. Fox, Roger V. Yelle
Hydrocarbon Ions In The Ionosphere Of Titan, Jane L. Fox, Roger V. Yelle
Physics Faculty Publications
We have constructed a new model of the ionosphere of Titan that includes 67 species and 626 reactions. Although N2+ is the major ion produced over most of the ionosphere, the ionization flows to ions whose parent neutrals have lower ionization potentials and to ions formed from species with large proton affinities. In contrast to other models, which have predicted that HCNH+ should be the major ion, our calculations suggest that the major ions at and below the ion peak are hydrocarbon ions, and H, C, and N-containing ions. Our predicted peak electron density for a solar …
High Quality Interfaces In Gaas-Alas Quantum Wells Determined From High Resolution Photoluminescence, D. C. Reynolds, David C. Look, B. Jogai, R. Kaspi, K. R. Evans, M. Estes
High Quality Interfaces In Gaas-Alas Quantum Wells Determined From High Resolution Photoluminescence, D. C. Reynolds, David C. Look, B. Jogai, R. Kaspi, K. R. Evans, M. Estes
Physics Faculty Publications
No abstract provided.
Defect Donor And Acceptor In Gan, David C. Look, D. C. Reynolds, Joseph W. Hemsky, J. R. Sizelove, R. L. Jones, Richard J. Molnar
Defect Donor And Acceptor In Gan, David C. Look, D. C. Reynolds, Joseph W. Hemsky, J. R. Sizelove, R. L. Jones, Richard J. Molnar
Physics Faculty Publications
No abstract provided.
Degenerate Layer At Gan/Sapphire Interface: Influence On Hall-Effect Measurements, David C. Look, Richard J. Molnar
Degenerate Layer At Gan/Sapphire Interface: Influence On Hall-Effect Measurements, David C. Look, Richard J. Molnar
Physics Faculty Publications
Temperature-dependent Hall-effect measurements in hydride vapor phase epitaxial GaN grown on sapphire can be well fitted over the temperature range 10–400 K by assuming a thin, degenerate n-type region at the GaN/sapphire interface. This degenerate interfacial region dominates the electrical properties below 30 K, but also significantly affects those properties even at 400 K, and can cause a second, deeper donor to falsely appear in the analysis. However, by using a two-layer Hall model, the bulk mobility and carrier concentration can be accurately ascertained.
The N-15/N-14 Isotope Fractionation In Dissociative Recombination Of N-2(+), Jane L. Fox, Aleksander B. Hać
The N-15/N-14 Isotope Fractionation In Dissociative Recombination Of N-2(+), Jane L. Fox, Aleksander B. Hać
Physics Faculty Publications
We have carried out Monte Carlo calculations of the velocity distributions and escape fractions for 14N and 15N released in dissociative recombination of 28N2+ and 29N2+, respectively, for a range of ion temperatures (Ti) and electron temperatures (Te) appropriate to the Martian exosphere. Separate calculations were carried out for each vibrational level of N2+ for 0≤ν≤6. We have taken into account the variation in the dissociative recombination cross section with relative velocity of the ion and electron, and the differences in the vibrational …
Microscopic Nature Of Thermally Stimulated Current And Electrical Compensation In Semi-Insulating Gaas, S. Kuisma, K. Saarinen, P. Hautojarvi, Z-Q. Fang, David C. Look
Microscopic Nature Of Thermally Stimulated Current And Electrical Compensation In Semi-Insulating Gaas, S. Kuisma, K. Saarinen, P. Hautojarvi, Z-Q. Fang, David C. Look
Physics Faculty Publications
No abstract provided.
A Fast Scan Submillimeter Spectroscopic Technique, Douglas T. Petkie, Thomas M. Goyette, Ryan P. A. Bettens, Sergei P. Belov, Sieghard Albert, Paul Helminger, Frank C. De Lucia
A Fast Scan Submillimeter Spectroscopic Technique, Douglas T. Petkie, Thomas M. Goyette, Ryan P. A. Bettens, Sergei P. Belov, Sieghard Albert, Paul Helminger, Frank C. De Lucia
Physics Faculty Publications
A new fast scan submillimeter spectroscopic technique (FASSST) has been developed which uses a voltage tunable backward wave oscillator (BWO) as a primary source of radiation, but which uses fast scan (~105 Doppler limited resolution elements/s) and optical calibration methods rather than the more traditional phase or frequency lock techniques. Among its attributes are (1) absolute frequency calibration to ~1/10 of a Doppler limited gaseous absorption linewidth (<0.1 MHz, 0.000 003 cm-1), (2) high sensitivity, and (3) the ability to measure many thousands of lines/s. Key elements which make this system possible include the excellent short term spectral purity of the …
Chemistry Of The Jovian Auroral Ionosphere, J. J. Perry, Y. H. Kim, Jane L. Fox, H. S. Porter
Chemistry Of The Jovian Auroral Ionosphere, J. J. Perry, Y. H. Kim, Jane L. Fox, H. S. Porter
Physics Faculty Publications
No abstract provided.
Optical Properties Of Gan Grown On Zno By Reactive Molecular Beam Epitaxy, F. Hamdani, A. Botchkarev, W. Kim, H. Morkoç, M. Yeadon, J. M. Gibson, S.-C. Y. Tsen, David J. Smith, Donald C. Reynolds, David C. Look, K. R. Evans, Cole W. Litton, William C. Mitchel, P. Hemenger
Optical Properties Of Gan Grown On Zno By Reactive Molecular Beam Epitaxy, F. Hamdani, A. Botchkarev, W. Kim, H. Morkoç, M. Yeadon, J. M. Gibson, S.-C. Y. Tsen, David J. Smith, Donald C. Reynolds, David C. Look, K. R. Evans, Cole W. Litton, William C. Mitchel, P. Hemenger
Physics Faculty Publications
High quality wurtzite GaN epilayers have been grown on ZnO(0001) substrates by reactive molecular beam epitaxy. Photoluminescence and reflectivity measurements point to high quality presumably due to the near match of both the crystal lattice parameter and the stacking order between GaN and ZnO. In addition, the good films lack the characteristic yellow photoluminescence band. Any misorientation of the GaN epilayer planes with respect to the ZnO substrate is not detectable with polarized reflectivity. The x-ray double crystal diffraction measurements indicate this misorientation is much smaller than those for GaN epilayers on SiC and Al2O3 . © …
Depth Measurement Of Doped Semiconductors Using The Hall Technique, G. C. Desalvo, David C. Look, Christopher A. Bozada, J. L. Ebel
Depth Measurement Of Doped Semiconductors Using The Hall Technique, G. C. Desalvo, David C. Look, Christopher A. Bozada, J. L. Ebel
Physics Faculty Publications
No abstract provided.
Identification Of Electron-Irradiation Defects In Semi-Insulating Gaas By Normalized Thermally Stimulated Current Measurements, David C. Look, Z-Q. Fang, Joseph W. Hemsky, P. Kengkan
Identification Of Electron-Irradiation Defects In Semi-Insulating Gaas By Normalized Thermally Stimulated Current Measurements, David C. Look, Z-Q. Fang, Joseph W. Hemsky, P. Kengkan
Physics Faculty Publications
No abstract provided.