Physical Sciences and Mathematics Commons^™

Defects In Ferroelectric Hfo2, A. Chouprik, D. Negrov, E. Y. Tsymbal, A. Zenkevich

Evgeny Tsymbal Publications

No abstract provided.

Cold Sintering Diisopropylamonium Bromide To Form Organic Ceramic Pellets, Darren Armstrong

Honors Theses

Diisopropylamonium bromide is an organic ferroelectric compound. Standard sample preparation methods either require a powder or a single crystal. Certain measurements cannot be done on powders due to equipment limitations, and single crystals are difficult and time consuming to produce and handle. Cold sintering is a relatively new process that allows the creation of ceramics. The original cold sintering process was adapted to work for diisopropylamonium bromide. This allows the creation of ceramics with a large surface area. These pellets can achieve up to 95% of the theoretical maximum density. While the pellets are currently unsuitable for electric testing at …

Reversible Spin Texture In Ferroelectric Hfo2, L. L. Tao, Tula R. Paudel, Alexey Kovalev, Evgeny Tsymbal

Evgeny Tsymbal Publications

Spin-orbit coupling effects occurring in noncentrosymmetric materials are known to be responsible for nontrivial spin configurations and a number of emergent physical phenomena. Ferroelectric materials may be especially interesting in this regard due to reversible spontaneous polarization making possible a nonvolatile electrical control of the spin degrees of freedom. Here, we explore a technologically relevant oxide material, HfO₂, which has been shown to exhibit robust ferroelectricity in a noncentrosymmetric orthorhombic phase. Using theoretical modelling based on density-functional theory, we investigate the spin-dependent electronic structure of the ferroelectric HfO₂ and demonstrate the appearance of chiral spin textures driven …

Domain Wall Conductivity In Semiconducting Hexagonal Ferroelectric Tbmno3 Thin Films, D. J. Kim, J. G. Connell, S. S. A. Seo, Alexei Gruverman

Alexei Gruverman Publications

Although enhanced conductivity of ferroelectric domain boundaries has been found in BiFeO₃ and Pb(Zr,Ti)O₃ films as well as hexagonal rare-earth manganite single crystals, the mechanism of the domain wall conductivity is still under debate. Using conductive atomic force microscopy, we observe enhanced conductance at the electrically-neutral domain walls in semiconducting hexagonal ferroelectric TbMnO₃ thin films where the structure and polarization direction are strongly constrained along the c-axis. This result indicates that domain wall conductivity in ferroelectric rare-earth manganites is not limited to charged domain walls. We show that the observed conductivity in the TbMnO₃ films is …

Ferroelectric Polarization Dependent Interface Effects, Xiaohui Liu

Department of Physics and Astronomy: Dissertations, Theses, and Student Research

Utilization of the switchable spontaneous polarization of nanometer scale ferroelectric materials offers a promising avenue for future nanoelectronic devices. In this dissertation, we use density-functional calculations and phenomenological modeling to explore the effects of interface termination on thin-film heterostructures, the effects of electron doping in bulk ferroelectric materials on ferroelectric stability, and the effects of ferroelectric polarization switching on the electronic and transport properties of interfaces.

For SrRuO₃/BaTiO₃/SrRuO₃ epitaxial heterostructures grown on SrTiO₃, we find that the built-in dipole at the BaO/RuO₂ terminated interface leads to a strong preference for one polarization. …

Ferroelectric And Dielectric Properties Of Electroactive Oligomers And Nanocomposites, Kristin Leigh Kraemer

Department of Physics and Astronomy: Dissertations, Theses, and Student Research

Polyvinylidene fluoride (PVDF) and its copolymers have been well established as ferroelectric polymers. The dielectric and ferroelectric properties for vinylidene fluoride (VDF) oligomer thin films were investigated. By synthesizing oligomers instead of long polymer chains, films with higher crystalinity can be formed and the locations of oligomers can be controlled for applications such as molecular electronics.

Evidence of ferroelectricity was observed in oligomer thin films evaporated onto room temperature substrates and by Langmuir-Blodgett (LB) deposition. Voltage and frequency dependence of the capacitance was measured. Oligomers functionalized with phosphonic acid formed self-assembled monolayers (SAM) on aluminum and mica substrates. Film thickness …

Functional Two-Dimensional Electronic Gases At Interfaces Of Oxide Heterostructures, Yong Wang

Department of Physics and Astronomy: Dissertations, Theses, and Student Research

A quasi-two dimensional electron gas (2DEG) in oxide heterostructures such as LaAlO₃/SrTiO₃ has unique properties that are promising for applications in all-oxide electronic devices. In this dissertation, we focus on understanding and predicting novel properties of the 2DEG by performing first-principles electronic calculations within the frame work of density-functional theory (DFT).

The effects of polarization in all-oxide heterostructures incorporating different ferroelectric constituents, such as KNbO₃/ATiO₃ (A = Sr, Ba, Pb), are investigated. It is found that screening charge at the interface that counteracts the depolarizing electric field in the ferroelectric material significantly changes the …

Modeling Of Metal-Ferroelectric-Insulator-Semiconductor Structures Based On Langmuir–Blodgett Copolymer Films, Timothy J. Reece, Stephen Ducharme

Stephen Ducharme Publications

Among the ferroelectric thin films used in field-effect transistor devices; the ferroelectric copolymer of polyvinylidene fluoride PVDF –CH2–CF2–, with trifluoroethylene TrFE –CHF–CF2–, has distinct advantages, including low dielectric constant, low processing temperature, low cost, and compatibility with organic semiconductors. The operation of a metal-ferroelectric insulatorsemiconductor structure with PVDF-TrFE as the ferroelectric layer was analyzed and optimized by numerical solution of the Miller and McWhorter model. A model device consisting of 20 nm PVDF/TrFE on a 10-nm-thick high-k dielectric buffer exhibits a memory window of 5 V with an operating voltage of 15 V. The operating voltage can be reduced to …

Nanoscale Domain Patterns In Ultrathin Polymer Ferroelectric Films, Pankaj Sharma, Timothy J. Reece, Daniel W. Wu, Vladimir M. Fridkin, Stephen Ducharme, Alexei Gruverman

Stephen Ducharme Publications

High-resolution studies of domain configurations in Langmuir–Blodgett films of ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene), P(VDF-TrFE), have been carried out by means of piezoresponse force microscopy (PFM). Changes in film thickness and morphology cause significant variations in polarization patterns. In continuous films and nanomesas with relatively low thickness/grain aspect ratio (<1/10), the relationship between the average domain size and thickness follows the Kittel law. Nanomesas with high aspect ratio (>1/5) exhibit significant deviations from this law, suggesting additional surface-energy-related mechanisms affecting the domain patterns. Polarization reversal within a single crystallite has been demonstrated and local switching parameters (coercive voltage and remnant piezoresponse) have been measured by monitoring the local hysteresis loops. Reliable control of polarization at the sub-grain level demonstrates …

Polarization Switching Kinetics Of Ferroelectric Nanomesas Of Vinylidene Fluoride-Trifluoroethylene Copolymer, R. V. Gaynutdinov, O. A. Lysova, S. G. Yudin, A. L. Tolstikhina, A. L. Kholkin, V. M. Fridkin, Stephen Ducharme

Stephen Ducharme Publications

The polarization switching kinetics of ferroelectric polymer nanomesas was investigated using piezoresponse force microscopy. The nanomesas were made by self-organization from Langmuir–Blodgett films of a 70% vinylidene fluoride and 30% trifluoroethylene copolymer. The polarization switching time exhibits an exponential dependence on reciprocal voltage that is consistent with nucleation-type switching dynamics.

Investigation Of Ferroelectricity In Newly Synthesized Nitrile Polymer Systems, Matt Poulsen, Stephen Ducharme, Alexander V. Sorokin, Sahadeva Reddy, James M. Takacs, Y. Wen, Jihee Kim, Shireen Adenwalla

Stephen Ducharme Publications

The ferroelectric and piezoelectric properties of newly synthesized polymer systems have been studied. To date PVDF and its copolymers P(VDF-TrFE) have provided the bulk of the knowledge pertaining to ferroelectricity in polymers. Recently, ultrathin ferroelectric films of P(VDF-TrFE) 70:30 have been fabricated using the Langmuir-Blodgett technique [4]. In this study, various new polymers have been synthesized by chemically altering the PVDF structure. This alteration was performed in order to enhance the amphiphilic nature of the polymer and thus improve the LB film quality and control. Various chemical groups have been used to replace the electropositive hydrogen and electronegative fluorine found …

Mapping Surface Polarization In Thin Films Of The Ferroelectric Polymer P(Vdf-Trfe)., Bradley W. Peterson, Stephen Ducharme, Vladimir M. Fridkin, Timothy J. Reece

Stephen Ducharme Publications

Pyroelectric Scanning Microscopy (PSM) has been developed to enable mapping of surface polarization in ferroelectric thin films, in particular the copolymer polyvinylidene fluoride trifluororethylene, or P(VDF-TrFE). The Chynoweth method for dynamically measuring pyroelectric current is employed in conjunction with a micropositioning system to construct two-dimensional images of the film polarization. These images have revealed enhancement of the polarization near the edges of the film below the average coercive field, with the center's polarization increasing thereafter to meet the edge value at saturation.

Electron Irradiation Effects On Ferroelectric Copolymer Langmuir-Blodgett Films, Christina M. Othon, Stephen Ducharme

Stephen Ducharme Publications

The effect of irradiation on the ferroelectric properties of Langmuir-Blodgett films of the copolymer poly(vinylidene fluoride-trifluorethelene) is investigating using 1.26 MeV electrons with dosages from 16 to 110 Mrad. Irradiation causes a systematic decrease in the phase transition temperature, coercive field and polarization of these thin films.

Comment On: 'Depolarization Corrections To The Coercive Field In Thin-Film Ferroelectrics', Stephen Ducharme, Vladimir Fridkin

Stephen Ducharme Publications

The Letter by Dawber et al. [J. Phys.: Condens. Matter 15 L393 (2003)] notes that incomplete screening in the electrodes of a ferroelectric capacitor can result in an underestimate for the true coercive field in films of nanometer thickness. We show that their estimate of the magnitude of this correction it too large in the case of ferroelectric copolymer Langmuir- Blodgett films and, as a result, invalidates the claim that finite-size scaling of the ferroelectric coercive field is evident in films thinner than 15 nm.