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Full-Text Articles in Physical Sciences and Mathematics
Quantitative Analysis Of The Density Of Trap States At The Semiconductor-Dielectric Interface In Organic Field-Effect Transistors, Peter J. Diemer, Zachary A. Lamport, Yaochuan Mei, Jeremy W. Ward, Katelyn P. Goetz, Wei Li, Marcia M. Payne, Martin Guthold, John E. Anthony, Oana D. Jurchescu
Quantitative Analysis Of The Density Of Trap States At The Semiconductor-Dielectric Interface In Organic Field-Effect Transistors, Peter J. Diemer, Zachary A. Lamport, Yaochuan Mei, Jeremy W. Ward, Katelyn P. Goetz, Wei Li, Marcia M. Payne, Martin Guthold, John E. Anthony, Oana D. Jurchescu
Chemistry Faculty Publications
The electrical properties of organic field-effect transistors are governed by the quality of the constituting layers, and the resulting interfaces. We compare the properties of the same organic semiconductor film, 2,8-difluoro- 5,11-bis (triethylsilylethynyl) anthradithiophene, with bottom SiO2 dielectric and top Cytop dielectric and find a 10× increase in charge carrier mobility, from 0.17 ± 0.19 cm2 V−1 s−1 to 1.5 ± 0.70 cm2 V−1 s−1, when the polymer dielectric is used. This results from a significant reduction of the trap density of states in the semiconductor band-gap, and a decrease in the …
Low-Voltage Polymer/Small-Molecule Blend Organic Thin-Film Transistors And Circuits Fabricated Via Spray Deposition, Simon Hunter, Jeremy W. Ward, Marcia M. Payne, John E. Anthony, Oana D. Jurchescu, Thomas D. Anthopoulos
Low-Voltage Polymer/Small-Molecule Blend Organic Thin-Film Transistors And Circuits Fabricated Via Spray Deposition, Simon Hunter, Jeremy W. Ward, Marcia M. Payne, John E. Anthony, Oana D. Jurchescu, Thomas D. Anthopoulos
Chemistry Faculty Publications
Organic thin-film electronics have long been considered an enticing candidate in achieving high-throughput manufacturing of low-power ubiquitous electronics. However, to achieve this goal, more work is required to reduce operating voltages and develop suitable mass-manufacture techniques. Here, we demonstrate low-voltage spray-cast organic thin-film transistors based on a semiconductor blend of 2,8-difluoro- 5,11-bis (triethylsilylethynyl) anthradithiophene and poly(triarylamine). Both semiconductor and dielectric films are deposited via successive spray deposition in ambient conditions (air with 40%–60% relative humidity) without any special precautions. Despite the simplicity of the deposition method, p-channel transistors with hole mobilities of >1 cm2/Vs are realized at −4 …