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Full-Text Articles in Physical Sciences and Mathematics
Electrochemical Capacitance-Voltage Profiling Of Nonuniformly Doped Gaas Heterostructures With Sqws And Mqws For Led Applications, George Yakovlev, Vasily Zubkov, Anna Solomnikova, Oleg Derevianko
Electrochemical Capacitance-Voltage Profiling Of Nonuniformly Doped Gaas Heterostructures With Sqws And Mqws For Led Applications, George Yakovlev, Vasily Zubkov, Anna Solomnikova, Oleg Derevianko
Turkish Journal of Physics
Light-emitting heterostructures with single and multiple GaAs/InGaAs quantum wells have been investigated by means of electrochemical capacitance-voltage (ECV) profiling. Capacitance-voltage characteristics were measured; concentration profiles of free charge carriers over the heterostructure depth as well as the intensity of quantum well filling by charge carriers were obtained. In heterostructures with a single quantum well (QW), we considered limitations of capacitance techniques for undoped QW profiling, which are situated near the metallurgic border of the p-n junction. We made a detailed consideration of phenomena related to Debye smearing and we developed and analyzed the dependence of the space charge region width …
Triangular Quantum Profiles: Transmission Probability And Energy Spectrum, Altuğ Arda
Triangular Quantum Profiles: Transmission Probability And Energy Spectrum, Altuğ Arda
Turkish Journal of Physics
Analytical expressions for the transition probability and the energy spectrum of the 1D Schrödinger equation with position-dependent mass are presented for the triangular quantum barrier and quantum well. The transmission coefficient is obtained by using the wave functions written in terms of Airy's functions and of the solutions of Kummer's differential equation. In order to show the validity of our analysis, an example by taking some numerical values for a GaAs heterostructure is presented.
First-Principles Modeling Of Gan/Mose$_{2}$ Van Der Waals Heterobilayer, Celal Yelgel
First-Principles Modeling Of Gan/Mose$_{2}$ Van Der Waals Heterobilayer, Celal Yelgel
Turkish Journal of Physics
We investigate structural and electronic properties of the graphene-like gallium nitride (GaN) monolayer deposited on a MoSe$_{2}$ monolayer by using density functional theory with the inclusion of the nonlocal van der Waals correction. The GaN is bound weakly to the MoSe$_{2}$ monolayer with adsorption energy of 49 meV/atom. We find that the heterobilayer is energetically favorable with the interlayer distance of 3.302 {\AA} indicating van der Waals (vdW) type interaction and the most stable stacking configuration is verified with different deposition sequences. The heterostructure of GaN/MoSe$_{2}$ is found to be indirect band gap semiconductor with gap value of 1.371 eV. …