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Full-Text Articles in Physical Sciences and Mathematics
Optical Absorption And Photoluminescence Measurements In Inp And Inp:Fe Bulk Crystals And Inspection Of The Relations Between These Measurements, Seydi̇ Doğan, Sebahatti̇n Tüzemen, Beki̇r Gürbulak, Aytunç Ateş, Muhammet Yildirim
Optical Absorption And Photoluminescence Measurements In Inp And Inp:Fe Bulk Crystals And Inspection Of The Relations Between These Measurements, Seydi̇ Doğan, Sebahatti̇n Tüzemen, Beki̇r Gürbulak, Aytunç Ateş, Muhammet Yildirim
Turkish Journal of Physics
Optical absorption and photoluminescence (PL) measurements were carried out in both undoped and Fe-doped samples and the effect of Fe doping on absorption and PL spectra were studied. The results show that Fe or Fe-related defects behave as non-radiative recombination centers in InP. This is very important from the point of view that the control of minority carrier lifetime is possible. On the other hand, comparative analysis of the PL results with the optical absorption data show that quantitative assessment of relative PL intensities is possible with respect to Fe concentrations.
The Absorption Properties Of P-Type Tlin_X Ga_{(1-X)} Se_2 And Tlgase_2, Beki̇r Gürbulak, Muhammet Yildirim, Aytunç Ateş, Sebahatti̇n Tüzemen, Yahya Kemal Yoğurtçu
The Absorption Properties Of P-Type Tlin_X Ga_{(1-X)} Se_2 And Tlgase_2, Beki̇r Gürbulak, Muhammet Yildirim, Aytunç Ateş, Sebahatti̇n Tüzemen, Yahya Kemal Yoğurtçu
Turkish Journal of Physics
$p-TlGaSe_2$, $p-TlIn_{0.3}Ga_{0.7}Se_2$ and $p-TlIn_{0.5}Ga_{0.5}Se_2$ single crystals were grown by the modified Bridgman-Stockbarger method in our crystal growth laboratory. The absorption measurements were carried out on $p-TlIn_xGa_{(1-x)}Se_2$ samples in temperature range 10-300 K in steps of 10 K. The binding energies of $p-TlGaSe_2$, $p-TlIn_{0.3}Ga_{0.7}Se_2$ and $p-TlIn_{0.5} Ga_{0.5}$ $Se_2$ were obtained as \\ 35.0 meV, 16.5 meV and 14.5 meV, respectively. THe direct band gaps were calculated as 2.244 eV, 2.195 eV, 2.164 eV in $p-TlGaSe_2$, 2.158 eV, 2.131 eV, 2.098 eV in $p-TlIn_{0.3}Ga_{0.7}Se_2$, and 2.107 eV, 2.075 eV, 2.019 eV in $p-TlIn_{0.5}Ga_{0.5}Se_2$ respectively, at sample temperatures of 10 K, 140 K …