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The Influence Of Ge Content And Annealing Temperature On The D.C And A.C Conductivity Of Ge_{X}Se_{1 - X} Thin Films, Maysoon Faisal Alias, M. N. Makadsi, Z. M. Al-Ajeli

Turkish Journal of Physics

Various samples of Ge_{x}Se_{1 - x} system have been prepared for x = 0.05, 0.15& 0.25 in an evacuated quartz tube. Thin films of Ge_{x}Se_{1 - x} film have been prepared via a thermal evaporation method with 350 \pm 5 nm thickness and rate deposition 6 nm/s. The alloy structure and thin films have been examined by X-ray diffraction (XRD). Atomic absorption spectroscopy (AAS) was used to examine the concentration of the composite elements (Ge and Se). The d.c and a.c conductivity of Ge_{x}Se_{1 - x} thin film have been studied as a function of Ge content x and annealing …