Physical Sciences and Mathematics Commons^™

The Effect Of Plasma On Graphene Quality In An Inductively Couple Plasma Chemical Vapor Deposition Reactor, Brendan Coyne

Undergraduate Research & Mentoring Program

Despite continued interest in research and application development, full scale graphene production is still limited by many factors including prohibitively high growth temperature requirements. Extremely high quality graphene growth is possible at high temperatures using chemical vapor deposition (CVD). Use of an inductively coupled plasma chemical vapor deposition (ICP CVD) reactor with the benefit of precursor gas decomposition through plasma generation, may provide possibility to reduce growth temperature. Herein, we report plasma’s effects on graphene growth by comparing growths of increasing power supplied to plasma generation and changes in precursor gas ratios. Plasma composition was characterized by ultraviolet and visible …