Open Access. Powered by Scholars. Published by Universities.®

Physical Sciences and Mathematics Commons

Open Access. Powered by Scholars. Published by Universities.®

Old Dominion University

Electrical & Computer Engineering Faculty Publications

Growth

Articles 1 - 2 of 2

Full-Text Articles in Physical Sciences and Mathematics

Seebeck Coefficient Enhancement Of Ald Pbte/Pbse Nanolaminate Structures Deposited Inside Porous Silicon Templates, Xin Chen, Pengtao Lin, Kai Zhang, Helmut Baumgart, Brian Geist, Vladimir Kochergin Jan 2016

Seebeck Coefficient Enhancement Of Ald Pbte/Pbse Nanolaminate Structures Deposited Inside Porous Silicon Templates, Xin Chen, Pengtao Lin, Kai Zhang, Helmut Baumgart, Brian Geist, Vladimir Kochergin

Electrical & Computer Engineering Faculty Publications

In this paper, lead chalcogenide based thermoelectric nanolaminate structures were fabricated by alternately depositing PbTe and PbSe ALD layers on regular planar silicon wafers and on microporous silicon templates. Lead bis(2,2,6,6-tetramethyl-3,5-heptanedionato) (Pb(C11H19O2) 2), plus (trimethylsilyl) telluride ((Me3Si)2Te) and (trimethylsilyl) selenide ((Me3Si)2Se) were used as the chemical ALD precursors for lead, tellurium and selenium, respectively. The Seebeck coefficient in horizontal direction (parallel direction to the surface) to the multiple layered PbTe/PbSe nanolaminate structures was measured by an MMR Seebeck system, and benchmarked against the Seebeck coefficient …


Atomic Layer Deposition Of Nanolaminate Structures Of Alternating Pbte And Pbse Thermoelectric Films, K. Zhang, A. D. Ramalingom Pillai, K. Bollenbach, D. Nminibapiel, W. Cao, H. Baumgart Jan 2014

Atomic Layer Deposition Of Nanolaminate Structures Of Alternating Pbte And Pbse Thermoelectric Films, K. Zhang, A. D. Ramalingom Pillai, K. Bollenbach, D. Nminibapiel, W. Cao, H. Baumgart

Electrical & Computer Engineering Faculty Publications

For this study PbTe and PbSe thin film nanolaminates have been prepared on silicon substrates with native oxide by Atomic Layer Deposition (ALD) using lead(II)bis(2,2,6,6-tetramethyl-3,5-heptanedionato) (Pb(C11H19O2)(2), (trimethylsilyl) telluride ((Me3Si)2Te) and bis-(triethyl silyl) selane ((Et3Si)2Se) as ALD precursors for lead, tellurium and selenium. The experimental evidence revealed the ALD growth of lead telluride and lead selenide followed the Vollmer-Weber island growth mode. We found a strong dependence of the nucleation process on the temperature. In this paper, we present the optimized conditions for growing PbTe …