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Full-Text Articles in Physical Sciences and Mathematics
Reflection High-Energy Electron Diffraction Studies Of Indium Phosphide (100) And Growth On Indium And Indium Nitride On Silicon (100), Mohamed Abd-Elsattar Hafez
Reflection High-Energy Electron Diffraction Studies Of Indium Phosphide (100) And Growth On Indium And Indium Nitride On Silicon (100), Mohamed Abd-Elsattar Hafez
Electrical & Computer Engineering Theses & Dissertations
Study of the effects of atomic hydrogen exposure on structure and morphology of semiconductor surfaces is important for fundamental properties and applications. In this dissertation, the electron yield of a hydrogen-cleaned indium phosphide (InP) surface was measured and correlated to the development of the surface morphology, which was monitored by in situ reflection high-energy electron diffraction (RHEED). Atomic hydrogen treatment produced a clean, well-ordered, and (2x4)-reconstructed InP(100) surface. The quantum efficiency, after activation to negative electron affinity, and the secondary electron emission were shown to increase with hydrogen cleaning time. RHEED patterns of low-index InP(100) surface were modified by the …
Reproducible Increased Mg Incorporation And Large Hole Concentration In Gan Using Metal Modulated Epitaxy, Shawn D. Burnham, Gon Namkoong, David C. Look, Bruce Clafin, W. Alan Doolittle
Reproducible Increased Mg Incorporation And Large Hole Concentration In Gan Using Metal Modulated Epitaxy, Shawn D. Burnham, Gon Namkoong, David C. Look, Bruce Clafin, W. Alan Doolittle
Electrical & Computer Engineering Faculty Publications
The metal modulated epitaxy (MME) growth technique is reported as a reliable approach to obtain reproducible large hole concentrations in Mg-doped GaN grown by plasma-assisted molecular-beam epitaxy on c-plane sapphire substrates. An extremely Ga-rich flux was used, and modulated with the Mg source according to the MME growth technique. The shutter modulation approach of the MME technique allows optimal Mg surface coverage to build between MME cycles and Mg to incorporate at efficient levels in GaN films. The maximum sustained concentration of Mg obtained in GaN films using the MME technique was above 7 × 1020 cm-3 …
Activation Energy Of Surface Diffusion And Terrace Width Dynamics During The Growth Of In (4×3) On Si (100) - (2×1) By Femtosecond Pulsed Laser Deposition, M. A. Hafez, H. E. Elsayed-Ali
Activation Energy Of Surface Diffusion And Terrace Width Dynamics During The Growth Of In (4×3) On Si (100) - (2×1) By Femtosecond Pulsed Laser Deposition, M. A. Hafez, H. E. Elsayed-Ali
Electrical & Computer Engineering Faculty Publications
The nucleation and growth of indium on a vicinal Si (100) - (2×1) surface at high temperature by femtosecond pulsed laser deposition was investigated by in situ reflection high energy electron diffraction (RHEED). RHEED intensity relaxation was observed for the first ∼2 ML during the growth of In (4×3) by step flow. From the temperature dependence of the rate of relaxation, an activation energy of 1.4±0.2 eV of surface diffusion was determined. The results indicate that indium small clusters diffused to terrace step edges with a diffusion frequency constant of (1.0±0.1) × 1011 s-1. The RHEED specular …