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Full-Text Articles in Physical Sciences and Mathematics
Experimental Study Of Exclusive ²H(E,E'P)N Reaction Mechanisms At High Q², S. E. Kuhn, M. J. Amaryan, H. Bagdasaryan, M. Bektasoglu, S. L. Careccia, K. V. Dharmawardane, G. E. Dodge, N. Guler, C. E. Hyde-Wright, H. G. Juengst, N. Kalantarians, A. Klein, M. R. Niroula, R. A. Niyazov, S. Tkachenko, L. B. Weinstein, J. Zhang, Et. Al., Clas Collaboration
Experimental Study Of Exclusive ²H(E,E'P)N Reaction Mechanisms At High Q², S. E. Kuhn, M. J. Amaryan, H. Bagdasaryan, M. Bektasoglu, S. L. Careccia, K. V. Dharmawardane, G. E. Dodge, N. Guler, C. E. Hyde-Wright, H. G. Juengst, N. Kalantarians, A. Klein, M. R. Niroula, R. A. Niyazov, S. Tkachenko, L. B. Weinstein, J. Zhang, Et. Al., Clas Collaboration
Physics Faculty Publications
The reaction 2H(e,e(')p)n has been studied with full kinematic coverage for photon virtuality 1.75 < Q2< 5.5 GeV2. Comparisons of experimental data with theory indicate that for very low values of neutron recoil momentum (pn< 100 MeV/c) the neutron is primarily a spectator and the reaction can be described by the plane-wave impulse approximation. For 100 < pn< 750 MeV/c, proton-neutron rescattering dominates the cross section, while Delta production followed by the NΔ → NN transition is the primary contribution at higher momenta.
Formation Of In- (2×1) And In Islands On Si (100) - (2×1) By Femtosecond Pulsed Laser Deposition, M. A. Hafez, H. E. Elsayed-Ali
Formation Of In- (2×1) And In Islands On Si (100) - (2×1) By Femtosecond Pulsed Laser Deposition, M. A. Hafez, H. E. Elsayed-Ali
Electrical & Computer Engineering Faculty Publications
The growth of indium on a vicinal Si (100) - (2×1) surface at room temperature by femtosecond pulsed laser deposition (fsPLD) was investigated by in situ reflection high-energy electron diffraction (RHEED). Recovery of the RHEED intensity was observed between laser pulses and when the growth was terminated. The surface diffusion coefficient of deposited In on initial two-dimensional (2D) In- (2×1) layer was determined. As growth proceeds, three-dimensional In islands grew on the 2D In- (2×1) layer. The RHEED specular profile was analyzed during film growth, while the grown In islands were examined by ex situ atomic force microscopy. The full …