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Perfection Of The Lattice Of Dislocation-Free Silicon, Studied By The Lattice-Constant And Density Method, Martin E. Straumanis, Pierre Borgeaud, William Joseph James

Materials Science and Engineering Faculty Research & Creative Works

The lattice-constant and density method revealed that a high-purity silicon crystal free of dislocations has a perfect lattice without an excess of vacant sites or interstitials (n′=8.0000 4) within the limits of error, in agreement with the results obtained with the decoration method. The lattice constant of vacuum heated silicon powder of semiconductor purity was 5.43070±0.00004 A; that of the nonheat-treated powder was 5.43081 A at 25°C. The constants determined from crystal chips by the rotating crystal method were lower: between 5.43028-5.43048 A at 25°C. As the constants of each series of measurements could be reproduced very well (s=±0.00004 A), …