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Materials Chemistry

Molecular Beam Epitaxy

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Full-Text Articles in Physical Sciences and Mathematics

Growth, Optimization, And Characterization Of Topological Insulator Nanostructures By Molecular Beam Epitaxy, Ido Levy Sep 2022

Growth, Optimization, And Characterization Of Topological Insulator Nanostructures By Molecular Beam Epitaxy, Ido Levy

Dissertations, Theses, and Capstone Projects

Topological insulators (TIs) have been the subject of much research since their discovery in 2009. The unique band structure of the TIs makes them attractive in research of exotic physical phenomena, such as the realization of the quantum anomalous Hall effect, as well as novel applications, including quantum computing, spintronics, and more. From a crystal growth perspective, their van-der-Waals structure also provides new opportunities, for example, by enabling the growth on a large selection of substrates. This thesis presents the growth of three-dimensional TI layers, heterostructures and magnetic TIs by molecular beam epitaxy (MBE). First, we show the improvement of …


Heterojunction Engineering For Next Generation Hybrid Ii-Vi Materials, Thor Garcia Sep 2017

Heterojunction Engineering For Next Generation Hybrid Ii-Vi Materials, Thor Garcia

Dissertations, Theses, and Capstone Projects

Molecular Beam Epitaxy(MBE) is a versatile thin film growth technique with monolayer control of crystallization. The flexibility and precision afforded by the technique allows for unique control of interfaces and electronic structure of the films grown. This facilitates the realization of novel devices and structures within a research environment normally only achieved though complex industrial processes. In the past, the control of each interface in MBE has been explored to great benefit. In this work, we study the control of these interfaces so as to increase the performance of novel devices material systems. This dissertation focuses on two main areas …