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Full-Text Articles in Physical Sciences and Mathematics

Coherent Vs Incoherent Interlayer Transport In Layered Metals, Gary L. Gard, J. Wosnitza, J. Hagel, J. S. Qualls, J. S. Brooks, E. Balthes, D. Schweitzer, J. A. Schlueter, U. Geiser, Javid Mohtasham, Rolf Walter Winter Apr 2002

Coherent Vs Incoherent Interlayer Transport In Layered Metals, Gary L. Gard, J. Wosnitza, J. Hagel, J. S. Qualls, J. S. Brooks, E. Balthes, D. Schweitzer, J. A. Schlueter, U. Geiser, Javid Mohtasham, Rolf Walter Winter

Chemistry Faculty Publications and Presentations

The magnetic-field, temperature, and angular dependence of the interlayer magnetoresistance of two different quasi-two-dimensional (2D) organic superconductors is reported. For k -BEDT-TTF)₂I₃, where BEDTTTF is bisethylenedithio-tetrathiafulvalene, we find a well-resolved peak in the angle-dependent magnetoresistance at Q590°(field parallel to the layers). This clear-cut proof for the coherent nature of the interlayer transport is absent for β″–(BEDT-TTF)₂SF₅CH₂CF₂SO₃. This and the nonmetallic behavior of the magnetoresistance suggest an incoherent quasiparticle motion for the latter 2D metal.


Diluted Magnetic Semiconductors Based On Sb2àXvxte3 „0.01ïXï0.03., Jeffrey Dyck, Pavel Hájek, Petr LošŤÁK, Ctirad Uher Mar 2002

Diluted Magnetic Semiconductors Based On Sb2àXvxte3 „0.01ïXï0.03., Jeffrey Dyck, Pavel Hájek, Petr LošŤÁK, Ctirad Uher

Jeffrey Dyck

We report on a diluted magnetic semiconductor based on the [formula] tetradymite structure doped with very low concentrations of vanadium (1—3 at. %). The anomalous transport behavior and robust magnetic hysteresis loops observed in magnetotransport and magnetic measurements are experimental manifestations of the ferromagnetic state in these materials. The [formula] exchange between holes and vanadium [formula] spins is estimated from the behavior of the magnetoresistance. A Curie temperature of at least 22 K is observed for [formula] This discovery offers possibilities for exploring magnetic properties of other tetradymite structure semiconductors doped with a wide range of [formula] transition metals.


Effect Of Ni On The Transport And Magnetic Properties Of Co1àXnixsb3, Jeffrey Dyck, Wei Chen, Jihui Yang, Gregory P. Meisner, Ctirad Uher Mar 2002

Effect Of Ni On The Transport And Magnetic Properties Of Co1àXnixsb3, Jeffrey Dyck, Wei Chen, Jihui Yang, Gregory P. Meisner, Ctirad Uher

Jeffrey Dyck

The filled skutterudite compounds based on the binary skutterudite [formula] are currently being investigated for their potential applications as thermoelectric materials. One route to optimization of these compounds is by doping on the Co site. An obvious candidate for an n-type dopant is Ni, since it has one more electron in its valence shell than Co. Up to now, however, only high concentrations of Ni in [formula] have been studied; and the valence of Ni in this compound and its influence on the transport and magnetic properties has been an open question. We present electrical resistivity, thermopower, Hall effect, magnetoresistance, …


Electrical And Magnetotransport Properties Of Canted Antiferromagnet Dy₅Si₂Ge₂, R. Nirmala, V. Sankaranarayanan, K. Sethupathi, Zili Chu, William B. Yelon, V. Prasad, A. V. Morozkin, Satish K. Malik, S. V. Subramanyam Jan 2002

Electrical And Magnetotransport Properties Of Canted Antiferromagnet Dy₅Si₂Ge₂, R. Nirmala, V. Sankaranarayanan, K. Sethupathi, Zili Chu, William B. Yelon, V. Prasad, A. V. Morozkin, Satish K. Malik, S. V. Subramanyam

Physics Faculty Research & Creative Works

Summary form only given. Since the giant magnetocaloric effect is encountered in a ferromagnetic Gd5Si2Ge2 alloy near room temperature it is considered as a suitable material for magnetic refrigerator applications. Also a commensurate structural transition occurs at the magnetic transition temperature and there is a good correlation between the crystal structure and magnetic properties. Such observations have triggered numerous experimental studies on similar rare earth alloys and compounds. We have synthesized its Dy- analogue, namely, Dy5Si2Ge2 and have characterized it by means of room temperature X-ray diffraction, ac magnetic susceptibility (15 K - 300 K), electrical resistivity (at zero field …