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Full-Text Articles in Physical Sciences and Mathematics
First-Principles Calculations On The Electronic Structure, Mechanical, Vibrational, And Thermal Properties Of The Ca₃Bin Antiperovskite Alloy, Reem Maher Mohamad
First-Principles Calculations On The Electronic Structure, Mechanical, Vibrational, And Thermal Properties Of The Ca₃Bin Antiperovskite Alloy, Reem Maher Mohamad
Theses
Antiperovskites are the counterparts of perovskites. They have diverse properties that make them physically rich and technologically relevant. In the recent years, the alkaline earth based antiperovskites, especially the ones with small semiconductor bandgap, have captured tremendous attention due to their properties which make them efficient to be used in optoelectronic and thermoelectric applications. In this thesis, we are shading light on the alkaline antiperovskite 𝐶𝑎3𝐵𝑖𝑁 due to its narrow bandgap. Thus, it can be considered as a promising candidate for thermoelectric and optoelectronic applications. Specifically, it is used to harvest waste thermal energy into electricity at low …
Bandgap Tuning Of Mose2 And Wse2 Monolayers Through Alloying And Substitution: An Ab Initio Study, Shahida Maqsood
Bandgap Tuning Of Mose2 And Wse2 Monolayers Through Alloying And Substitution: An Ab Initio Study, Shahida Maqsood
Theses
2D materials attracted considerable interest in the research community following the first report in 2004 on the preparation of graphene by simple micromechanical exfoliation of highly oriented pyrolytic graphite. For example, single-layer Molybdenum Di selenide (MoSe2) and Tungsten Di selenide (WSe2) transistors with on/off ratios of 108 and ultra-low standby power dissipation were demonstrated. Graphene electrodes have been used to develop fully transparent resistive memories to suppress unwanted surface effects that occur in oxide memory devices. Photodetectors based on MoSe2 with few layers have shown excellent photodetection properties. Phototransistors based on WSe2 monolayers exhibit …
Development Of Embedded Atom Method Interatomic Potentials For Ge-Sn-Si Ternary And Constituent Binary Alloys For Modeling Material Crystallization, Sudip Acharya
Browse all Theses and Dissertations
Group IV elements based nanoelectronics devices (mainly Si and Ge based devices) have been developed and improved over a long period of time and are the most influencing materials of semiconductor electronics, but due to their indirect bandgap their use in optoelectronics is limited. Alternatively, new Group IV alloys comprised of Ge, Si, and Sn semiconductor materials have emerged as attractive options for various electronic and optoelectronic applications. The binary and ternary alloys provide strain and energy bandgap engineering by controlling element content, a route for realizing direct-transition semiconductors, improvement in interface and defect properties, and a reduction of the …
Computational And Experimental Development Of 2d Anisotropic Photonic Crystal Metamaterials, James A. Ethridge
Computational And Experimental Development Of 2d Anisotropic Photonic Crystal Metamaterials, James A. Ethridge
Theses and Dissertations
The future of optical devices involves manipulation of nanoscale structure in order to achieve full control over the properties of the device. In fields as diverse as directed energy, remote sensing, optical communications and optical computing, these devices promise to greatly improve performance and efficiency. To advance this further, novel samples that incorporate both photonic crystal (PhC) structure and metamaterial properties, known as PhC metamaterials, are proposed. These PhC metamaterials allow for complete control over the directionality of the light-matter interaction to serve in these new applications. To develop this technology, first, metamaterials with no PhC structure are fabricated using …
Colloidal Synthesis And Optical Characterizations Of Semiconductor Nanocrystals From Nontoxic Elements, Minh Q. Ho
Colloidal Synthesis And Optical Characterizations Of Semiconductor Nanocrystals From Nontoxic Elements, Minh Q. Ho
Theses and Dissertations
To date, the search efforts have shifted from the toxic II-VI, III-V and IV-VI semiconductors to more environmentally friendly materials. Among Group II-V semiconductors, Zn3P2 has shown to be a more benign option, similar to Group IV (Ge, Si) materials, for future applications in photovoltaics and optoelectronics. This work is dedicated to the development of wet-chemical synthetic routes of (1) Zn3P2 and (2) Group IV (Ge, Si, Si1-xGex) nanocrystals with precise control over composition, crystal structure, size and dispersity by adjusting different reaction parameters such as temperature, time and solvent …
The Electrical Transport Study Of Graphene Nanoribbons And 2d Materials Beyond Graphene, Ming-Wei Lin
The Electrical Transport Study Of Graphene Nanoribbons And 2d Materials Beyond Graphene, Ming-Wei Lin
Wayne State University Dissertations
The electrical transport measurements on a suspended ultra-low-disorder graphene nanoribbon (GNR) with nearly atomically smooth edges that reveal a high mobility exceeding 3000 cm2 V-1 s-1 and an intrinsic bandgap was reported in this study. The experimentally derived bandgap is in quantitative agreement with the results of our electronic-structure calculations on chiral GNRs with comparable width taking into account the electron-electron interactions, indicating that the origin of the bandgap in non-armchair GNRs is partially due to the magnetic zigzag edges. In addition, electrical transport measurements show that current-annealing effectively removes the impurities on the suspended graphene nanoribbons, uncovering the intrinsic …
The Role Of Bandgap In The Secondary Electron Emission Of Small Bandgap Semiconductors: Studies Of Graphitic Carbon, Neal E. Nickles
The Role Of Bandgap In The Secondary Electron Emission Of Small Bandgap Semiconductors: Studies Of Graphitic Carbon, Neal E. Nickles
All Graduate Theses and Dissertations, Spring 1920 to Summer 2023
The question of whether the small bandgaps of semiconductors play a significant role in their secondary electron emission properties is investigated by studying evaporated graphitic amorphous carbon, which has a roughly 0.5 eV bandgap, in comparison with microcrystalline graphite, which has zero bandgap. The graphitic amorphous carbon is found to have a 30% increase in its maximum secondary electron yield over that of two microcrystalline graphite samples with comparable secondary electron yields: highly oriented pyrolytic graphite and colloidal graphite. The potentially confounding influence of the vacuum level has been isolated through the measurement of the photoelectron onset energy of the …