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Full-Text Articles in Physical Sciences and Mathematics
Synthesis And Catalytic Activity Of Nanostructured Cerium Oxide, Neil J. Lawrence
Synthesis And Catalytic Activity Of Nanostructured Cerium Oxide, Neil J. Lawrence
Department of Chemistry: Dissertations, Theses, and Student Research
Cerium oxide (ceria, CeO2-x where x is 0 to 0.5) has been one of the most widely used heterogeneous catalysts particularly in three way catalytic converters. Most of the catalytic traits can be attributed to two properties of ceria: first, the high mobility and storage capacity of oxygen within the lattice; second, the ease with which cerium changes between Ce3+ and Ce4+ states. These properties, combined with the abundance of cerium on earth, make ceria a low-cost highly effective alternative to noble metal catalysts. Recent research has been focused on the nanoscale properties of ceria.
The effect …
Highly Conductive Zno Grown By Pulsed Laser Deposition In Pure Ar, Robin C. Scott, Kevin D. Leedy, Burhan Bayraktaroglu, David C. Look, Yong-Hang Zhang
Highly Conductive Zno Grown By Pulsed Laser Deposition In Pure Ar, Robin C. Scott, Kevin D. Leedy, Burhan Bayraktaroglu, David C. Look, Yong-Hang Zhang
Physics Faculty Publications
Ga-doped ZnO was deposited by pulsed laser deposition at 200 °C on SiO2/Si, Al2O3, or quartz in 10 mTorr of pure Ar. The as-grown, bulk resistivity at 300 K is 1.8×10−4 Ω cm, three-times lower than that of films deposited at 200 °C in 10 mTorr of O2 followed by an anneal at 400 °C in forming gas. Furthermore, depth uniformity of the electrical properties is much improved. Mobility analysis shows that this excellent resistivity is mostly due to an increase in donor concentration, rather than a decrease in acceptor concentration. Optical …
Mobility Analysis Of Highly Conducting Thin Films: Application To Zno, David C. Look, K. D. Leedy, D. H. Tomich, B. Bayraktaroglu
Mobility Analysis Of Highly Conducting Thin Films: Application To Zno, David C. Look, K. D. Leedy, D. H. Tomich, B. Bayraktaroglu
Physics Faculty Publications
Hall-effect measurements have been performed on a series of highly conductive thin films of Ga-doped ZnO grown by pulsed laser deposition and annealed in a forming-gas atmosphere (5% H2 in Ar). The mobility as a function of thickness d is analyzed by a simple formula involving only ionized-impurity and boundary scattering and having a single fitting parameter, the acceptor/donor concentration ratio K = NA/ND. For samples with d = 3–100 nm, Kavg = 0.41, giving ND = 4.7×1020 and NA = 1.9×1020 cm−3. Thicker samples require a …
Chemical Structure Of Vanadium-Based Contact Formation On N-Ain, S. Pookpanratana, R. France, M. Blum, Sean R. Mulcahy, A. Bell, M. Bär, L. Weinhardt, Y. Zhang, T. Hofmann, O. Fuchs, W. Yang, J. D. Denlinger, T. D. Moustakas, C. Heske
Chemical Structure Of Vanadium-Based Contact Formation On N-Ain, S. Pookpanratana, R. France, M. Blum, Sean R. Mulcahy, A. Bell, M. Bär, L. Weinhardt, Y. Zhang, T. Hofmann, O. Fuchs, W. Yang, J. D. Denlinger, T. D. Moustakas, C. Heske
Geology Faculty Publications
We have investigated the chemical interaction between a Au/V/Al/V layer structure and n-type AlN epilayers using soft x-ray photoemission, x-ray emission spectroscopy, and atomic force microscopy. To understand the complex processes involved in this multicomponent system, we have studied the interface before and after a rapid thermal annealing step. We find the formation of a number of chemical phases at the interface, including VN, metallic vanadium, aluminum oxide, and metallic gold. An interaction mechanism for metal contact formation on the entire n-Al,GaN system is proposed. ©