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Full-Text Articles in Physical Sciences and Mathematics
Nonlinear Optical Conductivity Of Two-Dimensional Semiconductors With Rashba Spin-Orbit Coupling In Terahertz Regime, Yee Sin Ang, J C. Cao, Chao Zhang
Nonlinear Optical Conductivity Of Two-Dimensional Semiconductors With Rashba Spin-Orbit Coupling In Terahertz Regime, Yee Sin Ang, J C. Cao, Chao Zhang
Yee Sin Ang
We reveal that two-dimensional semiconductors with Rashba spin-orbit interaction (R2DG) exhibit exceptionally strong nonlinear optical response (NOR) in the terahertz frequency regime. The spin-split of the parabolic energy band in R2DG allows strong multiple-photon process to occur via inter-subband mechanism. We show sharp multiple photon edges in the nonlinear conductivity. The edges correspond to the cut-off effect produced by the multiple-photon process. For Rashba coupling parameter of λ R ≈ 10−10 eV m, electric field strength in the order of only 102 V/cm is required for the NOR to dominate over the linear response. Furthermore, the roles of the parabolic …
Investigation Of Carrier Transit Motion In Pcdtbt By Optical Shg Technique, Shahino Mah Abdullah
Investigation Of Carrier Transit Motion In Pcdtbt By Optical Shg Technique, Shahino Mah Abdullah
Shahino Mah Abdullah
We analyze the carrier transit behavior in poly[N-9'-heptadecanyl-2,7-carbazole-alt-5,5-(4',7'-di-2-thienyl-2',1',3'-benzothiadiazole)] (PCDTBT), which has been reported as a donor material for efficient bulk hetero junction photovolatic devices. The transfer and transient carrier mobilities in the PCDTBT thin films have been measured and analyzed. The transfer mobility has been measured by the transfer curve of the OFET, whereas, the transient mobility is recorded using a time-resolved electric-field-induced optical second-harmonic-generation (TRM-SHG) technique. Using TRM-SHG technique, the dynamic motion of the charge carriers in the PCDTBT thin films has been directly visualized. We anticipate that the analysis of the carrier motion by TRM-SHG, will be effective …
Investigation Of Charge Transport In Organic Polymer Donor/Acceptor Photovolatic Materials, Zubair Ahmad, Shahino Mah Abdullah, Khaulah Sulaiman
Investigation Of Charge Transport In Organic Polymer Donor/Acceptor Photovolatic Materials, Zubair Ahmad, Shahino Mah Abdullah, Khaulah Sulaiman
Shahino Mah Abdullah
Pi-conjugated organic semiconductors have long been used as either holes or electrons transport materials. Recently ambipolar charge carrier transport in these materials have been reported in many investigations. In this paper, we report on the basis of experimental results that the organic semiconductor (donor/acceptor) materials can be as good electrons transporters as these materials are holes transporters. In our study, the solution-processed unipolar diodes based on organic materials P3HT, VOPCPhO and their blends with PCBM have been fabricated. The I-V characteristics of these diodes have been analyzed in the space charge limited current regime. The values of the electron and …
Investigation Of Charge Transport In Organic Polymer Donor/Acceptor Photovolatic Materials, Zubair Ahmad, Shahino Mah Abdullah, Khaulah Sulaiman
Investigation Of Charge Transport In Organic Polymer Donor/Acceptor Photovolatic Materials, Zubair Ahmad, Shahino Mah Abdullah, Khaulah Sulaiman
Zubair Ahmad
Pi-conjugated organic semiconductors have long been used as either holes or electrons transport materials. Recently ambipolar charge carrier transport in these materials have been reported in many investigations. In this paper, we report on the basis of experimental results that the organic semiconductor (donor/acceptor) materials can be as good electrons transporters as these materials are holes transporters. In our study, the solution-processed unipolar diodes based on organic materials P3HT, VOPCPhO and their blends with PCBM have been fabricated. The I-V characteristics of these diodes have been analyzed in the space charge limited current regime. The values of the electron and …
Josephson-Vortex Flow Resistance In Bi2sr2ca2cu3oy Single Crystals And Its Possible Application In The Manipulation Of Spin And Charge Textures In Diluted Magnetic Semiconductors, Xiaolin Wang, C T Lin, B Liang, S Yu, S Ooi, K Hirata, S Y Ding, Dongqi Shi, S X. Dou, Zhi W. Lin, Jian G. Zhu
Josephson-Vortex Flow Resistance In Bi2sr2ca2cu3oy Single Crystals And Its Possible Application In The Manipulation Of Spin And Charge Textures In Diluted Magnetic Semiconductors, Xiaolin Wang, C T Lin, B Liang, S Yu, S Ooi, K Hirata, S Y Ding, Dongqi Shi, S X. Dou, Zhi W. Lin, Jian G. Zhu
Shi Xue Dou
In this work, the flow of the Josephson vortices (JVs) has been studied for the highly anisotropic Bi2Sr2Ca2Cu3Oy (Bi2223) single crystals. A giant flow of JVs or giant positive magnetoresistance (MR) of over 500%-2000% was obtained in fields of 0.1-5 T and remained almost constant over a wide temperature range from 110 down to 4 K, in contrast to superconducting vortices (SVs), which only produced MR in the vicinity of Tc. The flow of the JVs is expected to be much faster than that of SVs. It is proposed that the Josephson vortices could be used to manipulate the spin …
Aging Of A Thermoelectric Module: Visualization Of Elemental Analysis, Stacie M. Dahl, Bernice E. Mills
Aging Of A Thermoelectric Module: Visualization Of Elemental Analysis, Stacie M. Dahl, Bernice E. Mills
Stacie M Dahl
Visualization of elemental composition is done to compare the surfaces of an aged thermoelectric module (TM) to an unaged one. The two modules’ exteriors are also compared to their interiors. Highlights of the analysis are presented here.
Heat Transport In Sb2àXvxte3 Single Crystals, Jeffrey Dyck, W. Chen, C. Uher, Č. DrašAr, P. LošŤÁK
Heat Transport In Sb2àXvxte3 Single Crystals, Jeffrey Dyck, W. Chen, C. Uher, Č. DrašAr, P. LošŤÁK
Jeffrey Dyck
Antimony telluride doped with small concentrations of vanadium was recently identified as a diluted magnetic semiconductor. We present a study of the heat transport in single crystals of [formula] with [formula] 0.01, 0.02, and 0.03. Thermopower and thermal conductivity were measured from 1.5 K to 300 K. The thermopower is positive for all samples investigated and has a modest dependence on vanadium content. At low temperatures, the lattice thermal conductivity has an approximate [formula] dependence and the data up to 100 K can be fitted well assuming that phonons scatter on boundaries, point defects, charge carriers, and other phonons. Theoretical …
Transport Properties Of Polycrystalline Type-I Sn Clathrates, G. S. Nolas, J. L. Cohn, Jeffrey Dyck, C. Uher, J. Lang
Transport Properties Of Polycrystalline Type-I Sn Clathrates, G. S. Nolas, J. L. Cohn, Jeffrey Dyck, C. Uher, J. Lang
Jeffrey Dyck
Thermal conductivity, resistivity, Seebeck coefficient, and Hall measurements on polycrystalline Sn-clathrate compounds with the type-I hydrate crystal structure are reported. Interstitial alkali-metal atoms in these compounds reside inside polyhedral cavities formed by the tetrahedrally bonded Sn network atoms. Localized disorder associated with “rattling” motion of these interstitial atoms contributes to the low thermal conductivity of these semiconducting compounds. The Hall coefficient and resistivity for some compounds exhibit nonmonotonic temperature dependences consistent with a crossover with decreasing temperature from conduction-band to impurity-band conduction. The carrier mobility is found to be low even in the absence of interstitial atoms within the Sn …
Diluted Magnetic Semiconductors Based On Sb2àXvxte3 „0.01ïXï0.03., Jeffrey Dyck, Pavel Hájek, Petr LošŤÁK, Ctirad Uher
Diluted Magnetic Semiconductors Based On Sb2àXvxte3 „0.01ïXï0.03., Jeffrey Dyck, Pavel Hájek, Petr LošŤÁK, Ctirad Uher
Jeffrey Dyck
We report on a diluted magnetic semiconductor based on the [formula] tetradymite structure doped with very low concentrations of vanadium (1—3 at. %). The anomalous transport behavior and robust magnetic hysteresis loops observed in magnetotransport and magnetic measurements are experimental manifestations of the ferromagnetic state in these materials. The [formula] exchange between holes and vanadium [formula] spins is estimated from the behavior of the magnetoresistance. A Curie temperature of at least 22 K is observed for [formula] This discovery offers possibilities for exploring magnetic properties of other tetradymite structure semiconductors doped with a wide range of [formula] transition metals.
Effect Of Ni On The Transport And Magnetic Properties Of Co1àXnixsb3, Jeffrey Dyck, Wei Chen, Jihui Yang, Gregory P. Meisner, Ctirad Uher
Effect Of Ni On The Transport And Magnetic Properties Of Co1àXnixsb3, Jeffrey Dyck, Wei Chen, Jihui Yang, Gregory P. Meisner, Ctirad Uher
Jeffrey Dyck
The filled skutterudite compounds based on the binary skutterudite [formula] are currently being investigated for their potential applications as thermoelectric materials. One route to optimization of these compounds is by doping on the Co site. An obvious candidate for an n-type dopant is Ni, since it has one more electron in its valence shell than Co. Up to now, however, only high concentrations of Ni in [formula] have been studied; and the valence of Ni in this compound and its influence on the transport and magnetic properties has been an open question. We present electrical resistivity, thermopower, Hall effect, magnetoresistance, …
Imaging Of Paramagnetic Centres In Diamond, M.J. R. Hoch, Anthony Roy Day
Imaging Of Paramagnetic Centres In Diamond, M.J. R. Hoch, Anthony Roy Day
Anthony Roy Day
An imaging method for determining the spatial distribution of paramagnetic nitrogen centres in diamond is described. Results are presented for a sample consisting of two small type IB diamonds.