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Full-Text Articles in Physical Sciences and Mathematics
Optimal Technological Modes Of Ion Implantation And Following Annealing For Forming Thin Nanosized Films Of Silicides, A. S. Rysbaev, S. U. Irgashev, A. S. Kasimov, D. Sh. Juraeva, J. B. Khujaniyazov, M. I. Khudoyberdieva
Optimal Technological Modes Of Ion Implantation And Following Annealing For Forming Thin Nanosized Films Of Silicides, A. S. Rysbaev, S. U. Irgashev, A. S. Kasimov, D. Sh. Juraeva, J. B. Khujaniyazov, M. I. Khudoyberdieva
Eurasian Journal of Physics and Functional Materials
The formation of nanosized films of silicides on the surface of Si (111) and Si (100) was studied by the method of low-energy ion implantation. The optimal technological modes of ion implantation and subsequent annealing for the formation of thin nanoscale films of silicides were determined. It is shown that the appearance of new surface superstructures is additional confirmation of the formation of thin silicide films with a single crystal structure.
Change Of Electrophysical Properties Of The Si(111) And Si(100) Surface In The Process Of Ion Implantation And Next Annealing, A. S. Rysbaev, I. R. Bekpulatov, B. D. Igamov, Sh. X. Juraev
Change Of Electrophysical Properties Of The Si(111) And Si(100) Surface In The Process Of Ion Implantation And Next Annealing, A. S. Rysbaev, I. R. Bekpulatov, B. D. Igamov, Sh. X. Juraev
Eurasian Journal of Physics and Functional Materials
The change in the electrical properties of the Si(111) and Si(100) surfaces during ion implantation and subsequent annealing was studied. The possibilities of controlling of the electrophysical properties of the Si(111) and Si(100) surface layers by the implantation of ions of alkaline and alkaline-earth elements are analyzed. Some electrophysical properties of semiconductors containing p- and n-structures and the possibilities of their application in electronics are discussed.