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The Contribution Of Phonon-Induced Tunneling To Donor Esr Spectral Narrowing In Semiconductors, David Lawrence Meier
The Contribution Of Phonon-Induced Tunneling To Donor Esr Spectral Narrowing In Semiconductors, David Lawrence Meier
Masters Theses
"The narrowing of donor electron spin resonance spectra with increasing donor concentration ND and increasing temperature T has been observed in semiconductors in the past. One proposed explanation for this phenomenon has been narrowing due to electron motion caused by phonon-induced tunneling (hopping) between donor sites. According to the Anderson narrowing theory, the line width of the narrowed line can be expressed in terms of the average square spread of the non-narrowed spectrum, < H²>ave, and the average frequency of electron motion, ωn. Previous work has been done on narrowing by hopping, but rigorous expressions for ω …